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MA27V15

Panasonic Semiconductor
Part Number MA27V15
Manufacturer Panasonic Semiconductor
Description Silicon epitaxial planar type
Published Dec 20, 2006
Detailed Description www.DataSheet4U.com Variable Capacitance Diodes MA27V15 Silicon epitaxial planar type Unit: mm For VCO ■ Features • U...
Datasheet PDF File MA27V15 PDF File

MA27V15
MA27V15


Overview
www.
DataSheet4U.
com Variable Capacitance Diodes MA27V15 Silicon epitaxial planar type Unit: mm For VCO ■ Features • Ultraminiature Package 1.
0 mm × 0.
6 mm (height: 0.
52 mm), optimum for high-density mounting and high-speed mounting • Good linearity and large capacitance-ratio in CD − VR relation 0.
27+0.
05 –0.
02 2 0.
10+0.
05 –0.
02 1.
00±0.
05 1.
40±0.
05 1 0.
60±0.
05 ■ Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage Junction temperature Storage temperature Symbol VR Tj Tstg Rating 6 125 −55 to +125 Unit V °C 5˚ 0.
15 min.
5˚ 0 to 0.
01 °C 1: Anode 2: Cathode SSSMini2-F1 Package Marking Symbol: J ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Reverse current Diode capacitance Symbol IR CD0.
5V CD2.
5V Capacitance ratio Series resistance * Conditions VR = 5 V VR = 0.
5 V, f = 1 MHz VR = 2.
5 V, f = 1 MHz VR = 1 V, f = 470 MHz Min Typ Max 10 7.
30 2.
98 2.
35 7.
91 3.
23 2.
55 0.
45 CD0.
5V /CD2.
5V rD Note) 1.
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring method for diodes.
2.
Absolute frequency of input and output is 470 MHz.
3.
*: Measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER 0.
15 max.
0.
52±0.
03 0.
15 min.
Unit nA pF  Ω Publication date: November 2003 SKD00053BED 1 MA27V15 IF  V F 120 102 CD  VR f = 1 MHz Ta = 25°C 1.
044 1.
036 1.
028 f = 1 MHz CD  Ta 100 Diode capacitance CD (pF) Forward current IF (mA) Ta = 60°C 80 25°C 60 −40°C VR = 0.
5 V CD (Ta) CD (Ta = 25 °C) 1.
020 1.
012 2.
5 V 1.
004 0.
996 0.
988 10 40 20 0 0 0.
2 0.
4 0.
6 0.
8 1.
0 1.
2 1.
4 1 0 2 4 6 8 0.
980 0 40 80 Forward voltage VF (V) Reverse voltage VR (V) Ambient temperature Ta (°C) IR  T a 10 VR = 5 V Reverse current IR (nA) 1 10−1 10−2 0 40 80 120 Ambient temperature Ta (°C) 2 SKD00053BED Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent auth...



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