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TIM4450-8SL

Toshiba Semiconductor
Part Number TIM4450-8SL
Manufacturer Toshiba Semiconductor
Description MICROWAVE POWER GaAs FET
Published Dec 20, 2006
Detailed Description www.DataSheet4U.com MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWERT P1dB=39.5dB...
Datasheet PDF File TIM4450-8SL PDF File

TIM4450-8SL
TIM4450-8SL

Overview
www.
DataSheet4U.
com MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWERT P1dB=39.
5dBm at 4.
4GHz to 5.
0GHz n HIGH GAIN G1dB=9.
5dB at 4.
4GHz to 5.
0GHz TIM4450-8SL PRELIMINARY n BROAD BAND INTERNALLY MATCHED n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25° C ) CHARACTERISTICS SYMBOL CONDITION Output Power at 1dB P1dB Compression Point VDS= 10V Power Gain at 1dB G1dB f= 4.
4 to 5.
0GHz Compression Point Drain Current IDS1 Gain Flatness ∆G ηadd Power Added Efficiency rd 3 Order Intermodulation IM3 Distortion NOTE Drain Current IDS2 ∆Tch Channel Temperature Rise VDS X IDS X Rth(c-c) NOTE : Two Tone Test, Po=28.
5dBm (Single Carrier Level) UN...


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