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TIM4450-60SL

Toshiba Semiconductor
Part Number TIM4450-60SL
Manufacturer Toshiba Semiconductor
Description LOW INTERMODULATION DISTORTION
Published Dec 20, 2006
Detailed Description www.DataSheet4U.com MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM4450-60SL TECHNICAL DATA FEATURES T LOW INTER...
Datasheet PDF File TIM4450-60SL PDF File

TIM4450-60SL
TIM4450-60SL

Overview
www.
DataSheet4U.
com MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM4450-60SL TECHNICAL DATA FEATURES T LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 36.
5dBm Single Carrier Level T HIGH POWER P1dB=48.
0dBm at 4.
4GHz to 5.
0GHz T HIGH GAIN G1dB=9.
5dB at 4.
4GHz to 5.
0GHz T BROAD BAND INTERNALLY MATCHED FET T HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) UNIT dBm dB A dB % dBc A °C MIN.
47.
0 8.
5    -42   TYP.
MAX.
48.
0  9.
5 13.
2  42 -45    15.
0 ±0.
8   11.
8 100 CHARACTERISTICS SYMBOL CONDITIONS Output Power at 1dB Gain P1dB Compression Point Power Gain at 1dB Gain G1dB VDS= 10V Compression Point f = 4.
4 to 5.
0GHz IDSset≅9.
5A Drain Current IDS1 Gain Flatness ∆G ηadd Power Added Efficiency 3rd Order Intermodulation IM3 Two-Tone Test Distortion Po=36.
5dBm (Single Carrier Level) Drain Current IDS2 Channel Temperature Rise ∆Tch VDS X IDS X Rth(c-c) Recommended Gate Resistance(Rg) : 28 Ω (Max.
) ELECTRICAL CHARACTERISTICS CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage Thermal Resistance SYMBOL gm VGSoff IDSS VGSO Rth(c-c) ( Ta= 25°C ) UNIT S V A V °C/W MIN.
 -1.
0  -5  TYP.
20 -1.
8 38  0.
6 MAX.
 -3.
0   0.
8 CONDITIONS VDS= 3V IDS= 12.
0A VDS= 3V IDS= 200mA VDS= 3V VGS= 0V IGS= -1.
0mA Channel to Case ‹ The information contained herein is presented only as a guide for the applications of our products.
No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use.
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice.
It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product.
Rev.
Aug.
2003 TIM4450-60SL ABSOLUTE MAXIMUM RATINGS CHARACTERISTICS Drain-Source Voltage Gate-Source Voltage Drain Current Total Po...


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