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GA150TS60U

Part Number	GA150TS60U
Manufacturer	International Rectifier
Description	HALF-BRIDGE IGBT INT-A-PAK Ultra-FastTM Speed IGBT
Published	Dec 22, 2006
Detailed Description	www.DataSheet4U.com PD - 50056D GA150TS60U "HALF-BRIDGE" IGBT INT-A-PAK Features • Generation 4 IGBT technology • Ultr...
Datasheet	GA150TS60U PDF File

Overview

www.
DataSheet4U.
com PD - 50056D GA150TS60U "HALF-BRIDGE" IGBT INT-A-PAK Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses • HEXFRED™ antiparallel diodes with ultra- soft recovery • Industry standard package • UL approved Ultra-FastTM Speed IGBT VCES = 600V VCE(on) typ.
= 1.
7V @VGE = 15V, IC = 150A Benefits • Increased operating efficiency • Direct mounting to heatsink • Performance optimized for power conversion: UPS, SMPS, Welding • Lower EMI, requires less snubbing Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C ICM ILM IFM VGE VISOL PD @ TC = 25°C PD @ TC = 85°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Pulsed Collector CurrentQ Peak Switching CurrentR Peak Diode Forward Current Gate-to-Emitter Voltage RMS Isolation Voltage, Any Terminal To Case, t = 1 min Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Range Storage Temperature Range Max.
600 150 300 300 300 ±20 2500 440 230 -40 to +150 -40 to +125 Units V A V W °C Thermal / Mechanical Characteristics Parameter RθJC RθJC RθCS Thermal Resistance, Junction-to-Case - IGBT Thermal Resistance, Junction-to-Case - Diode Thermal Resistance, Case-to-Sink - Module Mounting Torque, Case-to-Heatsink S Mounting Torque, Case-to-Terminal 1, 2 & 3 T Weight of Module Typ.
— — 0.
1 — — 200 Max.
0.
28 0.
35 — 6.
0 5.
0 — Units °C/W N.
m g www.
irf.
com 1 05/20/02 GA150TS60U Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES VCE(on) VGE(th) ∆VGE(th)/∆TJ gfe ICES VFM IGES Parameter Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Voltage Min.
Typ.
Max.
Units Conditions 600 — — VGE = 0V, IC = 1mA — 1.
7 2.
3 VGE = 15V, IC = 150A — 1.
7 — V VGE = 15V, IC = 150A, TJ = 125°C Gate Threshold Voltage 3.
0 — 6.
0 IC = 750µA Temperature Coeff.
of Threshold Voltage — -11 — mV/°C VCE = V GE, IC = 750...

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GA150TS60U HALF-BRIDGE IGBT INT-A-PAK Ultra-FastTM Speed IGBT - International Rectifier

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