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IRG4ZC70UD

International Rectifier
Part Number IRG4ZC70UD
Manufacturer International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Published Dec 25, 2006
Detailed Description www.DataSheet4U.com PD -9.1668A IRG4ZC70UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Featur...
Datasheet PDF File IRG4ZC70UD PDF File

IRG4ZC70UD
IRG4ZC70UD

Overview
www.
DataSheet4U.
com PD -9.
1668A IRG4ZC70UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features q q Surface Mountable UltraFast CoPack IGBT C q q q q q UltraFast IGBT optimized for high switching frequencies n-channel IGBT co-packaged with HEXFRED™ ultrafast, ultra-soft recovery antiparallel diodes for use in bridge configurations Low gate charge G Low profile low inductance SMD-10 package E(k) Separated control & Power-connections for easy paralleling Inherently coplanar pins and tab Easy solder inspection and cleaning VCES = 600V VCE(ON)typ = 1.
5V @VGE = 15V, IC = 50A E Benefits q q q q Highest power density and efficiency available HEXFRED diodes optimized for performance with IGBTs; Minimized recovery characteristics IGBTs optimized for specific application conditions; high input impedance requires low gate drive power Low noise and interference Parameter Max.
600 100 50 400 400 50 400 ± 20 350 140 -55 to + 150 SMD-10 Absolute Maximum Ratings Units V A VCES IC @ TC = 25°C IC @ TC = 100°C I CM ILM IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Œ Clamped Inductive Load Current  Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range V W °C Thermal Resistance Parameter RθJC RθJC RθCS Wt Junction-to-Case - IGBT Junction-to-Case - Diode SMD-10 Case-to-Heatsink (typical), * Weight Min.
— — — — Typ.
— — 0.
59 6.
0(0.
21) Max.
0.
36 0.
69 — — Units °C/W g (oz) Notes: Œ Repetitive rating: VGE = 20V; pulse width limited by maximum junction temperature (figure 20)  VCC = 80%(VCES), VGE = 20V, L=10µH, RG= 5.
0Ω (figure 19) Ž Pulse width ≤ 80µs; duty factor ≤ 0.
1%.
 Pulse width 5.
0µs, single shot.
* Assumes device soldered to 3.
0 oz.
Cu on 3.
0mm IMS/Aluminum board, moun...


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