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MT6L53S

Toshiba Semiconductor
Part Number MT6L53S
Manufacturer Toshiba Semiconductor
Description VHF-UHF Band Low Noise Amplifier Application
Published Dec 25, 2006
Detailed Description www.DataSheet4U.com MT6L53S Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L53S VHF-UHF Band Lo...
Datasheet PDF File MT6L53S PDF File

MT6L53S
MT6L53S


Overview
www.
DataSheet4U.
com MT6L53S Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L53S VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application · Two devices are built into the sES6 package, which is smaller and thinner than the super-thin and ultra-super-mini (6-pin) ES6 package.
Unit: mm Mounted Devices Q1: SSM (TESM) Three-pin (SSM/TESM) product No.
MT3S06S (MT3S06T) Q2: TESM MT3S05T Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC (Note 1) Tj Tstg Q1 10 5 1.
5 15 7 150 125 -55~125 Q2 10 5 2 40 10 Unit V V V mA mA mW °C °C JEDEC JEITA TOSHIBA ― ― 2-2Q1A Weight: 2.
1 mg (typ.
) Note 1: Total power dissipation of Q1 and Q2 mounted on the circuit board Marking 6 5 4 Pin Connections B1 E2 B2 W Y Q1 Q2 1 2 3 C1 E1 C2 1 2002-01-23 MT6L53S Electrical Characteristics Q1-Side (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current DC current gain Transition frequency Insertion gain Symbol ICBO IEBO hFE fT ïS21eï2 (1) ïS21eï2 (2) NF (1) NF (2) Cre Test Condition VCB = 5 V, IE = 0 VEB = 1 V, IC = 0 VCE = 1 V, IC = 5 mA VCE = 3 V, IC = 5 mA VCE = 1 V, IC = 5 mA, f = 2 GHz VCE = 3 V, IC = 7 mA, f = 2 GHz VCE = 1 V, IC = 3 mA, f = 2 GHz VCE = 3 V, IC = 3 mA, f = 2 GHz VCB = 1 V, IE = 0, f = 1 MHz (Note 2) Min ¾ ¾ 70 7 ¾ 4.
5 ¾ ¾ ¾ Typ.
¾ ¾ ¾ 10 7.
5 8.
3 1.
7 1.
6 0.
35 Max 0.
1 1 140 ¾ ¾ ¾ 3 3 0.
75 Unit mA mA ¾ GHz dB Noise figure Reverse transfer capacitance dB pF Electrical Characteristics Q2-Side (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current DC current gain Transition frequency Insertion gain Noise figure Reverse transfer capacitance Symbol ICBO IEBO hFE fT ïS21eï (1) ïS21eï (2) NF Cre 2 2 Test Condition VCB = 5 V, IE = 0 VEB = 1 V, IC = 0 VCE = 1 V, IC = 5 mA VCE =...


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