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SDB55N03L

SamHop Microelectronics
Part Number SDB55N03L
Manufacturer SamHop Microelectronics
Description N-Channel Logic Level E nhancement Mode Field E ffect Transistor
Published Dec 25, 2006
Detailed Description www.DataSheet4U.com S DP /B 55N03L S amHop Microelectronics C orp. S eptember , 2002 N-Channel Logic Level E nhancemen...
Datasheet PDF File SDB55N03L PDF File

SDB55N03L
SDB55N03L

Overview
www.
DataSheet4U.
com S DP /B 55N03L S amHop Microelectronics C orp.
S eptember , 2002 N-Channel Logic Level E nhancement Mode Field E ffect Transistor 4 P R ODUC T S UMMAR Y V DS S 30V F E AT UR E S ( m W ) TYP ID 55A R DS (on) S uper high dense cell design for extremely low R DS (ON).
High power and current handling capability.
TO-220 & TO-263 package.
12.
5 @ V G S = 10V 20 @ V G S = 4.
5V D D G D S G S G S DP S E R IE S TO-220 S DB S E R IE S TO-263(DD-P AK) S ABS OLUTE MAXIMUM R ATINGS (TC =25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous -P ulsed a S ymbol V DS V GS @ TJ=125 C ID IDM IS PD T J , T S TG Limit 30 20 55 140 55 75 0.
5 -65 to 175 Unit V V A A A W W/ C C Drain-S ource Diode Forward C urrent Maximum P ower Dissipation @ Tc=25 C Derate above 25 C Operating and S torage Temperature R ange THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-C ase Thermal R esistance, Junction-to-Ambient R JC R JA 1 2.
5 62.
5 C /W C /W S DP /B 55N03L E LE CTR ICAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted) 4 Parameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS b Condition V GS = 0V, ID = 250uA V DS = 24V, V GS =0V V GS = 16V, V DS = 0V V DS = V GS , ID = 250uA V GS = 10V, ID = 27A V GS = 4.
5V, ID = 22A V GS = 10V, V DS = 10V V DS = 10V, ID = 27A Min Typ Max Unit 30 10 100 V uA nA V m ohm m ohm ON CHAR ACTE R IS TICS a Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance 1 1.
5 12.
5 20 60 32 930 340 120 V DD = 15V, ID = 1A, V GS = 10V, R GE N =60 ohm V DS =15V, ID=27.
5A,V GS =10V V DS =15V, ID=27.
5A,V GS =4.
5V V DS =15V, ID = 27.
5A, V GS =10V 2 3 14 23 A S PF PF PF DYNAMIC CHAR ACTE R IS TICS b Input Capacitance Output Capacitance R everse Transfer Capacitance V DS =15V...


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