DatasheetsPDF.com

KTC3542T

KEC
Part Number KTC3542T
Manufacturer KEC
Description EPITAXIAL PLANAR NPN TRANSISTOR
Published Dec 27, 2006
Detailed Description www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA RELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS, STROBES APPLICATION. KTC3...
Datasheet PDF File KTC3542T PDF File

KTC3542T
KTC3542T

Overview
www.
DataSheet4U.
com SEMICONDUCTOR TECHNICAL DATA RELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS, STROBES APPLICATION.
KTC3542T EPITAXIAL PLANAR NPN TRANSISTOR E FEATURES ᴌAdoption of MBIT Processes.
ᴌLarge Current Capacitance.
ᴌLow Collector-to-Emitter Saturation Voltage.
A F G K B DIM A B 2 3 C D MILLIMETERS _ 0.
2 2.
9 + 1.
6+0.
2/-0.
1 _ 0.
05 0.
70 + _ 0.
1 0.
4 + 2.
8+0.
2/-0.
3 _ 0.
2 1.
9 + 0.
95 _ 0.
05 0.
16 + 0.
00-0.
10 0.
25+0.
25/-0.
15 0.
60 0.
55 D ᴌUltrasmall Package Facilitates Miniaturization in end Products.
ᴌHigh Allowable Power Dissipation.
ᴌComplementary to KTA1542T.
C L G ᴌHigh-Speed Switching.
1 E F G H I J K L J CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range DC Pulse SYMBOL VCBO VCEO VEBO IC ICP IB PC * Tj Tstg RATING 40 30 5 3 5 600 0.
9 150 -55ᴕ150 UNIT V V V A mA W ᴱ ᴱ Type Name 1.
EMITTER 2.
BASE 3.
COLLECTOR Marking Lot No.
* Package mounted on a ceramic board (600Ὅᴧ0.
8Ὂ) ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Transition Frequency Collector Output Capacitance Turn-On Time Swiitching Time SYMBOL ICBO IEBO V(BR)CBO V(BR)CEO V(BR)EBO VCE(sat)1 VCE(sat)2 VBE(sat) hFE fT Cob ton INPUT TEST CONDITION VCB=30V, IE=0 VEB=4V, IC=0 IC=10Ọ A, IE=0 IC=1mA, IB=0 IE=10Ọ A, IC=0 IC=1.
5A, IB=30mA IC=1.
5A, IB=75mA IC=1.
5A, IB=30mA VCE=2V, IC=500mA VCE=10V, IC=500mA VCB=10V, f=1MHz PW=20µs DC < = 1% IB1 I B2 RB 50Ω VR 100µF 470µF VCC =12V 24Ω MIN.
40 30 5 200 - OUTPUT Storage Time tstg Fall Time tf V BE =-5V 20IB1=-20IB2=IC =500mA 2001.
6.
29 Revision No : 0 I J MAXIMUM RATING (Ta=25ᴱ) H TSM HH TYP.
120 105 0.
83 450 20 30 MAX.
0.
1 0.
1 180 155 1.
2 560 MHz pF UNIT Ọ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)