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MAAPGM0046-DIE

Tyco Electronics
Part Number MAAPGM0046-DIE
Manufacturer Tyco Electronics
Description Power Amplifier
Published Dec 27, 2006
Detailed Description www.DataSheet4U.com RO-P-DS-3066 - - 400mW Ku-Band Power Amplifier 15.5-18.0 GHz Preliminary Information MAAPGM0046-D...
Datasheet PDF File MAAPGM0046-DIE PDF File

MAAPGM0046-DIE
MAAPGM0046-DIE


Overview
www.
DataSheet4U.
com RO-P-DS-3066 - - 400mW Ku-Band Power Amplifier 15.
5-18.
0 GHz Preliminary Information MAAPGM0046-DIE Features ♦ ♦ ♦ ♦ 15.
5-18.
0 GHz GaAs MMIC Amplifier 400 mW Saturated Output Power Level 15.
5-18.
0 GHz Operation Variable Drain Voltage (4-10V) Operation Self-Aligned MSAG® MESFET Process Primary Applications ♦ Point-to-Point Communications ♦ Ku Satellite Communications Description The MAAPGM0046-Die is a 3-stage 400mW power amplifier with onchip bias networks.
This product is fully matched to 50 ohms on both the input and output.
It can be used as a power amplifier stage or as a driver stage in high power applications.
Each device is 100% RF tested on wafer to ensure performance compliance.
The part is fabricated using M/A-COM’s repeatable, high performance and highly reliable GaAs Multifunction Self-Aligned Gate (MSAG®) MESFET Process.
This process provides polyimide scratch protection.
Electrical Characteristics: TB = 40°C1, Z0 = 50Ω, VDD = 8V, VGG = -1.
8V, Pin = 12 dBm Parameter Bandwidth Output Power Power Added Efficiency 1-dB Compression Point Small Signal Gain Input VSWR Output VSWR Gate Current Drain Current Output Third Order Intercept Noise Figure 3rd Order Intermodulation Distortion, Single Carrier Level = 18 dBm 5th Order Intermodulation Distortion, Single Carrier Level = 18 dBm Symbol f POUT PAE P1dB G VSWR VSWR IGG IDD OTOI NF IM3 IM5 Typical 15.
5 -18.
0 26 11 25 16 3:1 2:1 <2 < 600 32 8 34 47 mA mA dBm dB dBc dBc Units GHz dBm % dBm dB 1.
TB = MMIC Base Temperature RO-P-DS-3066 - - 2/6 400mW Ku-Band Power Amplifier Maximum Operating Conditions 1 Parameter Input Power Drain Supply Voltage Gate Supply Voltage Quiescent Drain Current (No RF) Quiescent DC Power Dissipated (No RF) Junction Temperature Storage Temperature Symbol PIN VDD VGG IDQ PDISS TJ TSTG MAAPGM0046-DIE Absolute Maximum 17.
0 +12.
0 -3.
0 660 5.
1 180 -55 to +150 Units dBm V V mA W °C °C 1.
Operation outside of these ranges may reduce product reliability.
Ope...



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