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PBSS5480X

NXP
Part Number PBSS5480X
Manufacturer NXP
Description PNP low VCEsat (BISS) transistor
Published Dec 27, 2006
Detailed Description www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS5480X 80 V, 4 A PNP low VCEsat (BIS...
Datasheet PDF File PBSS5480X PDF File

PBSS5480X
PBSS5480X

Overview
www.
DataSheet4U.
com DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS5480X 80 V, 4 A PNP low VCEsat (BISS) transistor Product specification Supersedes data of 2004 Jun 8 2004 Nov 08 Philips Semiconductors Product specification 80 V, 4 A PNP low VCEsat (BISS) transistor FEATURES • High hFE and low VCEsat at high current operation • High collector current IC: 4 A • High efficiency leading to less heat generation.
APPLICATIONS • Medium power peripheral drivers (e.
g.
fans and motors) • Strobe flash units for digital still cameras and mobile phones • Inverter applications (e.
g.
TFT displays) • Power switch for LAN and ADSL systems • Medium power DC-to-DC conversion • Battery chargers.
DESCRIPTION PNP low VCEsat (BISS) transistor in a SOT89 (SC-62) plastic package.
NPN complement: PBSS4480X.
MARKING TYPE NUMBER PBSS5480X Note 1.
* = p: made in Hong Kong.
* = t: made in Malaysia.
* = W: made in China.
MARKING CODE(1) *1Z 3 2 1 PBSS5480X QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PINNING PIN 1 2 3 emitter collector base DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX.
−80 −4 −10 75 UNIT V A A mΩ 2 3 1 sym079 Fig.
1 Simplified outline (SOT89) and symbol.
ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PBSS5480X SC-62 DESCRIPTION plastic surface mounted package; collector pad for good heat transfer; 3 leads VERSION SOT89 2004 Nov 08 2 Philips Semiconductors Product specification 80 V, 4 A PNP low VCEsat (BISS) transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL VCBO VCEO VEBO IC ICM ICRP IB IBM Ptot PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current repetitive peak collector current base current (DC) peak base current total power dissipation tp ≤ 1 ms Tamb ≤ 25 °C notes 2 and 3 note 3 note 4 note 1 note 5 Tstg Tj Tamb Notes storage temperature junction te...


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