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IRL7NJ3802

Part Number	IRL7NJ3802
Manufacturer	International Rectifier
Description	HEXFET POWER MOSFET SURFACE MOUNT
Published	Dec 29, 2006
Detailed Description	www.DataSheet4U.com PD - 94721 HEXFET® POWER MOSFET SURFACE MOUNT (SMD-0.5) Product Summary Part Number IRL7NJ3802 BVD...
Datasheet	IRL7NJ3802 PDF File

Overview

www.
DataSheet4U.
com PD - 94721 HEXFET® POWER MOSFET SURFACE MOUNT (SMD-0.
5) Product Summary Part Number IRL7NJ3802 BVDSS IRL7NJ3802 12V, N-CHANNEL RDS(on) 0.
0085 ID 22A* 12V Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits.
SMD-0.
5 Features: n n n n n n n Low RDS(on) Avalanche Energy Ratings Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 4.
5V, TC = 25°C ID @ VGS = 4.
5V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max.
Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Operating Junction Storage Temperature Range Package Mounting Surface Temperature Weight * Current is limited by package For footnotes refer to the last page 300 (for 5 s) 1.
0 22* 22* 88 50 0.
4 ±12 130 22 5.
0 -55 to 150 Units A W W/°C V mJ A mJ o C g www.
irf.
com 1 08/13/03 IRL7NJ3802 Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage ∆BV DSS /∆ T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min 12 — — — 0.
6 42 — — — — — — — — — — — — Typ Max Units — 0.
009 — — — — — — — — — — — — — — — 4.
0 — ...

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IRL7NJ3802 HEXFET POWER MOSFET SURFACE MOUNT - International Rectifier

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