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IXTQ36N30P

IXYS Corporation
Part Number IXTQ36N30P
Manufacturer IXYS Corporation
Description Power MOSFET
Published Dec 29, 2006
Detailed Description PolarHTTM Power MOSFET IXTA 36N30P IXTP 36N30P IXTQ 36N30P N-Channel Enhancement Mode Avalanche Rated V= DSS ID25 = ≤...
Datasheet PDF File IXTQ36N30P PDF File

IXTQ36N30P
IXTQ36N30P

Overview
PolarHTTM Power MOSFET IXTA 36N30P IXTP 36N30P IXTQ 36N30P N-Channel Enhancement Mode Avalanche Rated V= DSS ID25 = ≤ RDS(on) 300 V 36 A 110 mΩ Symbol Test Conditions TO-263 (IXTA) Maximum Ratings VDSS V DGR VGS VGSM ID25 IDM I AR EAR EAS dv/dt PD TJ TJM Tstg T L TSOLD Md Weight TJ = 25° C to 150° C T J = 25° C to 150° C; R GS = 1 MΩ Continuous Transient TC = 25° C TC = 25° C, pulse width limited by TJM T C = 25° C TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS, TJ ≤150° C, RG = 10 Ω TC = 25° C 1.
6 mm (0.
062 in.
) from case for 10 s Plastic body for 10 s Mounting torque (TO-3P / TO-220) TO-3P TO-220 TO-263 300 V 300 V ±30 V ±40 V 36 A 90 A 36 A 30 mJ 1.
0 J 10 V/ns 300 W -55 .
.
.
+150 °C 150 °C -55 .
.
.
+150 °C 300 °C 260 °C 1.
13/10 Nm/lb.
in.
5.
5 g 4 g 3 g Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS = 0 V, ID = 250 µA Characteristic Values Min.
Typ.
Max.
300 V VGS(th) VDS = VGS, ID = 250µA 3.
0 5.
5 V IGSS VGS = ±20 VDC, VDS = 0 ±100 nA IDSS VDS = VDSS VGS = 0 V TJ = 125° C 1 µA 200 µA RDS(on) VGS = 10 V, ID = 0.
5 ID25 Pulse test, t ≤300 µs, duty cycle d ≤ 2 % 92 110 m Ω G S D(TAB) TO-220 (IXTP) G DS TO-3P (IXTQ) D(TAB) G D S G = Gate S = Source D(TAB) D = Drain TAB = Drain Features l International standard packages l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect Advantages l Easy to mount l Space savings l High power density © 2005 IXYS All rights reserved DS99155E(10/05) Symbol g fs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS IXTA 36N30P IXTP 36N30P IXTQ 36N30P Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) Min.
Typ.
Max.
V = 10 V; I = 0.
5 I , pulse test 12 22 S DS D D25 VGS = 0 V, VDS = 25 V, f = 1 MHz 2250 pF 370 pF 90 pF VGS = 10 V, VDS = 0.
5 VDSS, ID = ID25 RG = 10 Ω (External) 24 ns 30 ns 97 ns 28 ns...


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