DatasheetsPDF.com

IXTA3N120

IXYS Corporation
Part Number IXTA3N120
Manufacturer IXYS Corporation
Description Power MOSFET
Published Dec 29, 2006
Detailed Description High Voltage Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTA3N120 IXTP3N120 IXTH3N120...
Datasheet PDF File IXTA3N120 PDF File

IXTA3N120
IXTA3N120

Overview
High Voltage Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTA3N120 IXTP3N120 IXTH3N120 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 1200 V 1200 V 20 V 30 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150C TC = 25C 3 12 3 700 5 200 -55 .
.
.
+150 150 -55 .
.
.
+150 A A A mJ V/ns W C C C Maximum Lead Temperature for Soldering 300 °C 1.
6 mm (0.
062in.
) from Case for 10s 260 °C Mounting Force (TO-263) 10.
.
65 / 2.
2.
.
14.
6 Mounting Torque (TO-247 & T...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)