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NE678M04

NEC
Part Number NE678M04
Manufacturer NEC
Description MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR
Published Dec 29, 2006
Detailed Description www.DataSheet4U.com MEDIUM POWER NPN SILICON NE678M04 HIGH FREQUENCY TRANSISTOR FEATURES • • • • HIGH GAIN BANDWIDTH: f...
Datasheet PDF File NE678M04 PDF File

NE678M04
NE678M04

Overview
www.
DataSheet4U.
com MEDIUM POWER NPN SILICON NE678M04 HIGH FREQUENCY TRANSISTOR FEATURES • • • • HIGH GAIN BANDWIDTH: fT = 12 GHz HIGH OUTPUT POWER: P-1dB = 18 dBm at 1.
8 GHz HIGH LINEAR GAIN: GL = 13 dB at 1.
8 GHz NEW LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of only 0.
59 mm Flat lead style for better RF performance +0.
40-0.
05 2 +0.
30 2.
05±0.
1 1.
25±0.
1 3 2.
0±0.
1 R55 1.
25 0.
650.
65 0.
650.
65 DESCRIPTION The NE678M04 is fabricated using NEC's HFT3 wafer process.
With a transition frequency of 12 GHz, the NE678M04 is usable in applications from 100 MHz to 3 GHz.
The NE678M04 provides P1dB of 18 dBm, even with low voltage and low current, making this device an excellent choice for the driver stage for mobile or fixed wireless applications.
The NE678M04 is housed in NEC's new low profile/flat lead style "M04" package 1 +0.
30-0.
05 (leads 1, 3 and ,4) 0.
59±0.
05 +0.
11-0.
05 MAX 100 100 75 dBm dB dBm dB % dB GHz pF 8.
0 120 18.
0 13.
0 13.
5 10.
5 55 1.
7 12.
0 0.
42 0.
7 2.
5 15...


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