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PE4231

Peregrine Semiconductor
Part Number PE4231
Manufacturer Peregrine Semiconductor
Description SPDT High Power UltraCMOS
Published Dec 29, 2006
Detailed Description www.DataSheet4U.com Product Specification PE4231 Product Description The PE4231 SPDT High Power UltraCMOS™ RF Switch i...
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PE4231
PE4231

Overview
www.
DataSheet4U.
com Product Specification PE4231 Product Description The PE4231 SPDT High Power UltraCMOS™ RF Switch is designed to cover a broad range of applications from DC to 1.
3 GHz.
This single-supply reflective switch integrates on-board CMOS control logic driven by a simple, single-pin CMOS or TTL compatible control input.
Using a nominal +3-volt power supply, a typical input 1 dB compression point of +32 dBm can be achieved.
The PE4231 also exhibits input-output isolation of better than 42 dB at 1.
0 GHz and is offered in a small 8-lead MSOP package.
The PE4231 SPDT High Power UltraCMOS™ RF Switch is manufactured in Peregrine’s patented Ultra Thin Silicon (UTSi®) CMOS process, offering the performance of GaAs with the economy and integration of conventional CMOS.
Figure 1.
Functional Diagram RFCommon SPDT High Power UltraCMOS™ DC – 1.
3 GHz RF Switch Features • Optimized for 75 Ω systems • Single +3-volt power supply • Low insertion loss: 0.
80 dB at 1.
0 GHz • High isolation: 42 dB at 1.
0 GHz • Typical input 1 dB compression point of +32 dBm • Single-pin CMOS or TTL logic control • Low cost Figure 2.
Package Type 8-lead MSOP RF1 RF2 CMOS Control Driver CTRL Table 1.
Electrical Specifications @ +25 °C, VDD = 3 V (ZS = ZL = 75 Ω) Parameter Operation Frequency Insertion Loss Isolation – RFCommon to RF1/RF2 Isolation – RF1 to RF2 Return Loss ‘ON’ Switching Time ‘OFF’ Switching Time Video Feedthrough 2 3 1 Conditions 50 MHz 1000 MHz 50 MHz 1000 MHz 50 MHz 1000 MHz 1000 MHz CTRL to 0.
1 dB final value, 2 GHz CTRL to 25 dB isolation, 2 GHz Minimum DC Typical 0.
50 Maximum 1300 0.
60 0.
90 Units MHz dB dB dB dB ns ns mVpp dBm dBm 73 40 58 33 16 0.
80 75 42 60 35 17 2000 900 15 Input 1 dB Compression Input IP3 Notes: 3 1000 MHz 1000 MHz, 17 dBm 30 50 32 1.
Device linearity will begin to degrade below 1 MHz.
2.
Measured with a 1 ns risetime, 0/3 V pulse and 500 MHz bandwidth.
3.
Measured in a 50 Ω system.
©2005 Peregrine Semiconductor Corp.
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