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EM25LV010

ELAN Microelectronics
Part Number EM25LV010
Manufacturer ELAN Microelectronics
Description Flash Memory
Published Dec 30, 2006
Detailed Description www.DataSheet4U.com EM25LV010 1 Megabit (128K x 8) Serial Flash Memory SPECIFICATION General Description The EM25LV010...
Datasheet PDF File EM25LV010 PDF File

EM25LV010
EM25LV010

Overview
www.
DataSheet4U.
com EM25LV010 1 Megabit (128K x 8) Serial Flash Memory SPECIFICATION General Description The EM25LV010 is a 1 M bits Flash memory organized as 128K x 8 bits and uses a single voltage of 2.
7-3.
6V for Program and Erase.
It features a typical 2ms Page-Program time and a typical 40ms Block-Erase time.
The device uses status register to detect the completion of the Program or Erase operation.
To protect against inadvertent write, the device has on-chip hardware and software data protection schemes.
The device offers typical 100,000 cycles endurance and a greater than 10 years data retention.
The EM25LV010 conforms to SPI Bus compatible Serial Interface.
It consisted of four pins (serial clock, chip select, serial data in, and serial data out) that support high-speed serial data transfers of up to 33MHz.
The Hold pin, Write Protect pin, and Programmable Write Protect features provide flexible control.
The EM25LV010 is offered in 8-lead SO package and known good die (KGD).
For KGD, please contact ELAN Microelectronics or its representatives for detailed information (see Appendix at the bottom of this specification for Ordering Information).
The EM25LV010 devices are suitable for applications that require memories with convenient and economical updating of program, data or configurations, e.
g.
, graphic cards, hard disk drives, networking cards, digital camera printer, LCD monitors, cordless Phones, etc.
Features Single Power Supply • Full voltage range from 2.
7 to 3.
6 volts for both read and write operations • Regulated voltage range: 3.
0 to 3.
6 volts for both read and write operations Small block Erase Capability Block: Uniform 32K bytes Clock Rate • 33MHz (Maximum) Power Consumption • Active Current: 4mA (Typical) • Power-down Mode Standby current: 1µA (Typical) Page Program Features • Up to 256 Bytes in 2ms (Typical) Erase Features • Block-Erase Time: 40ms (Typical) • Chip-Erase Time: 40ms (Typical) Automatic Write Timing • Internal VPP Generation SPI...


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