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FQI58N08

Fairchild Semiconductor
Part Number FQI58N08
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published Dec 30, 2006
Detailed Description www.DataSheet4U.com FQB58N08 / FQI58N08 December 2000 QFET FQB58N08 / FQI58N08 80V N-Channel MOSFET General Descripti...
Datasheet PDF File FQI58N08 PDF File

FQI58N08
FQI58N08

Overview
www.
DataSheet4U.
com FQB58N08 / FQI58N08 December 2000 QFET FQB58N08 / FQI58N08 80V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes.
These devices are well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control.
D TM Features • • • • • • • 57.
5A, 80V, RDS(on) = 0.
024Ω @VGS = 10 V Low gate charge ( typical 50 nC) Low Crss ( typical 120 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQB58N08 / FQI58N08 80 57.
5 40.
6 230 ± 25 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * Power Dissipation (TC = 25°C) 560 57.
5 14.
6 6.
5 3.
75 146 0.
97 -55 to +175 300 TJ, TSTG TL - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Thermal Characteristics Symbol RθJC RθJA RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient Typ ---Max 1.
03 40 62.
5 Units °C/W °C/W °C/W * When mounted on the minimum pad size recommended (PCB Mount) ©2000 Fairchild Semiconductor International Rev.
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