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IRHQ63110

International Rectifier
Part Number IRHQ63110
Manufacturer International Rectifier
Description (IRHQ6110 / IRHQ63110) RADIATION HARDENED POWER MOSFET SURFACE MOUNT
Published Dec 30, 2006
Detailed Description www.DataSheet4U.com PD - 91781B IRHQ6110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSF...
Datasheet PDF File IRHQ63110 PDF File

IRHQ63110
IRHQ63110

Overview
www.
DataSheet4U.
com PD - 91781B IRHQ6110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET MOSFET TECHNOLOGY SURFACE MOUNT (LCC-28) ™ ® Product Summary Part Number Radiation Level RDS(on) IRHQ6110 100K Rads (Si) 0.
6Ω IRHQ63110 300K Rads (Si) 0.
6Ω IRHQ6110 100K Rads (Si) 1.
1Ω IRHQ63110 300K Rads (Si) 1.
1Ω ID 3.
0A 3.
0A -2.
3A -2.
3A CHANNEL N N P P LCC-28 International Rectifier’s RAD-HardTM HEXFET® MOSFET Technology provides high performance power MOSFETs for space applications.
This technology has over a decade of proven performance and reliability in satellite applications.
These devices have been characterized for both Total Dose and Single Event Effects (SEE).
The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.
These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
Features: n n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Surface Mount Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max.
Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Pckg.
Mounting Surface Temp.
Weight For footnotes, refer to the last page Pre-Irradiation N-Channel 3.
0 1.
9 12 12 0.
1 ±20 85 ➁ 3.
0 1.
2 3.
0 ➂ -55 to 150 o P-Channel -2.
3 -1.
5 -9.
2 12 0.
1 Units A W W/°C ±20 75 ⑦ -2.
3 1.
2 9.
0 ⑧ V mJ A mJ V/ns C g 300 (for 5s) 0.
89 (Typical) www.
irf.
com 1 03/24/04 ...


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