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MRF7S19100NR1

Part Number	MRF7S19100NR1
Manufacturer	Motorola Semiconductor
Description	RF Power Field Effect Transistors
Published	Dec 30, 2006
Detailed Description	www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF7S19100N Rev. 1, 6/2006 RF Power Field...
Datasheet	MRF7S19100NR1 PDF File

Overview

www.
DataSheet4U.
com Freescale Semiconductor Technical Data Document Number: MRF7S19100N Rev.
1, 6/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz.
Suitable for CDMA and multicarrier amplifier applications.
To be used in Class AB and Class C for PCN - PCS/cellular radio and WLL applications.
• Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1000 mA, Pout = 29 Watts Avg.
, Full Frequency Band, 3GPP Test Model 1, 64 DPCH with 50% Clipping, Channel Bandwidth = 3.
84 MHz, Input Signal PAR = 7.
5 dB @ 0.
01% Probability on CCDF.
Power Gain — 17.
5 dB Drain Efficiency — 30% Device Output Signal PAR — 6.
1 dB @ 0.
01% Probability on CCDF ACPR @ 5 MHz Offset — - 38 dBc in 3.
84 MHz Channel Bandwidth • Capable of Handling 5:1 VSWR, @ 32 Vdc, 1960 MHz, 100 Watts CW Peak Tuned Output Power • Pout @ 1 dB Compression Point w 100 W CW Features • 100% PAR Tested for Guaranteed Output Power Capability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Integrated ESD Protection • Designed for Digital Predistortion Error Correction Systems • 200°C Capable Plastic Package • RoHS Compliant • In Tape and Reel.
R1 Suffix = 500 Units per 44 mm, 13 inch Reel MRF7S19100NR1 MRF7S19100NBR1 1930 - 1990 MHz, 29 W AVG.
, 28 V SINGLE W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 1486 - 03, STYLE 1 TO - 270 WB - 4 PLASTIC MRF7S19100NR1 CASE 1484 - 04, STYLE 1 TO - 272 WB - 4 PLASTIC MRF7S19100NBR1 Table 1.
Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Operating Voltage Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS VDD Tstg TJ Value - 0.
5, +65 - 0.
5, +10 32, +0 - 65 to +200 200 Unit Vdc Vdc Vdc °C °C Table 2.
Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 82°C, 100 W CW Case Temperature 79°C, 29 W CW...

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