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MRF7S18170HSR3

Part Number	MRF7S18170HSR3
Manufacturer	Motorola Semiconductor
Description	RF Power Field Effect Transistors
Published	Dec 30, 2006
Detailed Description	www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF7S18170H Rev. 0, 10/2006 RF Power Fiel...
Datasheet	MRF7S18170HSR3 PDF File

Overview

www.
DataSheet4U.
com Freescale Semiconductor Technical Data Document Number: MRF7S18170H Rev.
0, 10/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1805 to 1880 MHz.
Suitable for CDMA and multicarrier amplifier applications.
To be used in Class AB and Class C for PCN - PCS/cellular radio and WLL applications.
• Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 50 Watts Avg.
, Full Frequency Band, 3GPP Test Model 1, 64 DPCH with 50% Clipping, Channel Bandwidth = 3.
84 MHz, Input Signal PAR = 7.
5 dB @ 0.
01% Probability on CCDF.
Power Gain — 17.
5 dB Drain Efficiency — 31% Device Output Signal PAR — 6.
2 dB @ 0.
01% Probability on CCDF ACPR @ 5 MHz Offset — - 37 dBc in 3.
84 MHz Channel Bandwidth • Capable of Handling 5:1 VSWR, @ 32 Vdc, 1840 MHz, 170 Watts CW Peak Tuned Output Power • Pout @ 1 dB Compression Point w 170 Watts CW Features • 100% PAR Teste...

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MRF7S18170HSR3 RF Power Field Effect Transistors - Motorola Semiconductor

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