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EE-SX1055

Omron Electronics
Part Number EE-SX1055
Manufacturer Omron Electronics
Description Photomicrosensor
Published Dec 31, 2006
Detailed Description Photomicrosensor (Transmissive) EE-SX1055 Be sure to read Precautions on page 25. ■ Dimensions Note: All units are in ...
Datasheet PDF File EE-SX1055 PDF File

EE-SX1055
EE-SX1055


Overview
Photomicrosensor (Transmissive) EE-SX1055 Be sure to read Precautions on page 25.
■ Dimensions Note: All units are in millimeters unless otherwise indicated.
0.
2 max.
0.
2 max.
■ Features • Longer leads allow the sensor to be mounted to a 1.
6-mm thick board.
• 5.
4-mm-tall compact model.
• PCB mounting type.
• High resolution with a 0.
5-mm-wide aperture.
■ Absolute Maximum Ratings (Ta = 25°C) White band 5.
4±0.
2 3.
6±0.
5 Four, 0.
5 Four, 0.
25 Internal Circuit K C AE Terminal No.
A K C E Name Anode Cathode Collector Emitter Four, 5° Optical axis 0.
5±0.
05 Cross section AA Unless otherwise specified, the tolerances are as shown below.
Dimensions 3 mm max.
3 < mm ≤ 6 6 < mm ≤ 10 Tolerance ±0.
3 ±0.
375 ±0.
45 Emitter Item Forward current Pulse forward current Reverse voltage Detector Collector–Emitter voltage Emitter–Collector voltage Collector current Collector dissipation Ambient tem- Operating perature Storage Soldering temperature Symbol IF IFP VR VCEO Rated value 50 mA (see note 1) 1A (see note 2) 4V 30 V VECO --- IC PC Topr Tstg Tsol 20 mA 100 mW (see note 1) –25°C to 85°C –30°C to 100°C 260°C (see note 3) Note: 1.
Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2.
The pulse width is 10 μs maximum with a frequency of 100 Hz.
3.
Complete soldering within 10 seconds.
10 < mm ≤ 18 ±0.
55 18 < mm ≤ 30 ±0.
65 ■ Electrical and Optical Characteristics (Ta = 25°C) Emitter Detector Rising time Falling time Item Forward voltage Reverse current Peak emission wavelength Light current Dark current Leakage current Collector–Emitter saturated voltage Peak spectral sensitivity wavelength Symbol VF IR λP IL ID ILEAK VCE (sat) λP tr tf Value 1.
2 V typ.
, 1.
5 V max.
0.
01 μA typ.
, 10 μA max.
940 nm typ.
0.
5 mA min.
, 14 mA max.
2 nA typ.
, 200 nA max.
--0.
1 V typ.
, 0.
4 V max.
850 nm typ.
4 μs typ.
4 μs typ.
Condition IF = 30 mA VR = 4 V IF = 20 mA IF = 20 mA, VCE = 10 V VCE = 10 V, 0 lx --IF = 20 mA, IL = 0.
1 mA VCE = ...


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