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GSOT24C

Vishay Siliconix
Part Number GSOT24C
Manufacturer Vishay Siliconix
Description (GSOT03C - GSOT36C) ESD Protection Diode
Published Jan 8, 2007
Detailed Description www.DataSheet4U.com VISHAY GSOT03C to GSOT36C Vishay Semiconductors ESD Protection Diode Features • Transient protect...
Datasheet PDF File GSOT24C PDF File

GSOT24C
GSOT24C

Overview
www.
DataSheet4U.
com VISHAY GSOT03C to GSOT36C Vishay Semiconductors ESD Protection Diode Features • Transient protection for data lines as per IEC 61000-4-2 (ESD) 15 kV (air) 8 kV (contact) IEC 61000-4-5 (Lightning) see IPPM below 1 3 2 18070 • Devices have dual diodes, which can protect two unidirectional lines with pin 3 used as a common anode connection, or a single bidirectional line between pins 1 and 2.
Mechanical Data Case: SOT-23 Plastic Package Molding Compound Flammability Rating: UL 94 V-0 Terminals: High temperature soldering guaranteed: 260 °C/10 sec.
at terminals Weight: 8 mg Absolute Maximum Ratings Ratings at 25 °C, ambient temperature unless otherwise specified Parameter Peak power 1) Test condition 8/20 µs pulse 8.
3 ms single half sine-wave Symbol PPK IFSM Value 300 7 Unit W A dissipation1) Forward surge current Non-repetitive current pulse and derated above TA = 25 °C, for GSOT03C, GSOT04C, the peak power dissipation is 270 W Thermal Characteristics Ratings at 25 °C, ambient temperature unless otherwise specified Parameter Operation and storage temperature range Test condition Symbol Tstg, TJ Value - 55 to + 150 Unit °C Document Number 85824 Rev.
1, 02-Jun-03 www.
vishay.
com 1 GSOT03C to GSOT36C Vishay Semiconductors Electrical Characteristics TJ = 25 °C unless otherwise noted Part Number Device Marking Code Rated Stand-off Voltage Minimum Breakdown Voltage @ 1 mA VWM V GSOT03C GSOT04C GSOT05C GSOT08C GSOT12C GSOT15C GSOT24C GSOT36C 1) VISHAY Maximum Clamping Voltage @ IP = 1 A1) VC V 7.
0 8.
5 9.
8 13.
4 19.
0 24.
0 43.
0 60.
0 9.
0 10.
5 12.
5 15.
0 28.
0 35.
0 60.
0 75.
0 @ IP = 5 A1) Maximum Pulse Peak Current tp = 8/20 µs IPPM A 18 17 17 15 12 10 5 2 Maximum Leakage Current @ VWM ID µA 125 125 100 10 2 1 1 1 Maximum Capacitance @ 0 V, 1 MHz C pF 600 600 400 350 150 100 63 60 VBR V 4.
5 5.
0 6.
0 8.
5 13.
3 16.
7 26.
7 40 03C 04C 05C 08C 12C 15C 24C 36C 3.
3 4.
0 5.
0 8.
0 12.
0 15.
0 24.
0 36.
0 8/20 µs waveform used (see figure 2) Typical Chara...


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