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IXTQ23N60Q

IXYS Corporation
Part Number IXTQ23N60Q
Manufacturer IXYS Corporation
Description Power MOSFETs Q-Class
Published Jan 10, 2007
Detailed Description www.DataSheet4U.com Power MOSFETs Q-Class IXTQ 23N60Q VDSS ID25 RDS(on) = = = 600 V 23 A 0.32 Ω N-Channel Enhance...
Datasheet PDF File IXTQ23N60Q PDF File

IXTQ23N60Q
IXTQ23N60Q

Overview
www.
DataSheet4U.
com Power MOSFETs Q-Class IXTQ 23N60Q VDSS ID25 RDS(on) = = = 600 V 23 A 0.
32 Ω N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Gate Charge and Capacitances Preliminary Data Sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 600 600 ± 30 ± 40 23 92 23 30 1.
5 5 400 -55 .
.
.
+150 150 -55 .
.
.
+150 V V V V A A A mJ J V/ns W °C °C °C °C g TO-3P (IXTQ) G D S (TAB) G = Gate S = Source D = Drain TAB = Drain Features z 1.
6 mm (0.
062 in.
) from case for 10 s Mounting torque 300 6 1.
13/10 Nm/lb.
in.
Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250 µA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 25°C TJ = 125°C Characteristic Values Min.
Typ.
Max.
600 2.
5 4.
5 ±100 25 1 0.
32 V V nA µA mA Ω IXYS advanced low gate charge process z International standard package z Low gate charge and capacitance - easier to drive - faster switching z Low RDS (on) z Unclamped Inductive Switching (UIS) rated z Molding epoxies meet UL 94 V-0 flammability classification Advantages z z z Easy to mount Space savings High power density VGS = 10 V, ID = 0.
5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 2003 IXYS All rights reserved DS99080(08/03) IXTQ 23N60Q Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min.
Typ.
Max.
10 20 3300 VGS = 0 V, VDS = 25 V, f = 1 MHz 410 130 20 VGS = 10 V, VDS = 0.
5 VDSS, ID = 0.
5 ID25 RG = 1.
5 Ω (External) 20 45 20 90 VGS = 10 V, VDS = 0.
5 VDSS, ID = 0.
5 ID25 20 45 0.
31 0.
25 S pF pF pF ns ns ns ns nC nC nC K/W K/W TO-3P Outline gfs Ciss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 10 V; I...


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