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MA26V04

Panasonic Semiconductor
Part Number MA26V04
Manufacturer Panasonic Semiconductor
Description Silicon epitaxial planar type
Published Jan 10, 2007
Detailed Description www.DataSheet4U.com Variable Capacitance Diodes MA26V04 Silicon epitaxial planar type Unit: mm For VCO ■ Features • G...
Datasheet PDF File MA26V04 PDF File

MA26V04
MA26V04

Overview
www.
DataSheet4U.
com Variable Capacitance Diodes MA26V04 Silicon epitaxial planar type Unit: mm For VCO ■ Features • Good linearity and large capacitance-ratio in CD − VR relation • Small series resistance rD 1.
00±0.
05 0.
60±0.
05 3 2 1 0.
39+0.
01 −0.
03 0.
25±0.
05 0.
50±0.
05 ■ Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage Junction temperature Storage temperature Symbol VR Tj Tstg Rating 6 125 −55 to +125 Unit V °C °C 0.
25±0.
05 1 3 0.
65±0.
01 2 0.
05±0.
03 1: Anode 2: N.
C.
3: Cathode ML3-N2 Package Marking Symbol: 2H ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Reverse current Diode capacitance Series resistance * Symbol IR CD1V CD3V rD VR = 5 V VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 3 V, f = 470 MHz 10.
0 5.
8 Conditions Min Typ Max 10 11.
1 6.
4 0.
35 Ω Unit nA pF Note) 1.
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2.
Absolute frequency of input and output is 470 MHz.
3.
*: Measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER 0.
15±0.
05 0.
05±0.
03 0.
35±0.
01 Publication date: November 2003 SKD00075CED 1 MA26V04 IF  V F 120 25°C 100 CD  VR 102 f = 1 MHz Ta = 25°C 1.
032 f = 1 MHz CD  Ta Diode capacitance CD (pF) Forward current IF (mA) 1.
024 VR = 1 V Ta = 60°C −40°C CD (Ta) CD (Ta = 25°C) 80 1.
016 3V 60 10 1.
008 40 1.
000 20 0.
992 0 0 0.
2 0.
4 0.
6 0.
8 1.
0 1.
2 1 0 2 4 6 8 0.
984 0 20 40 60 80 100 Forward voltage VF (V) Reverse voltage VR (V) Ambient temperature Ta (°C) IR  T a 10 VR = 5 V Reverse current IR (nA) 1 10−1 10−2 0 40 80 120 Ambient temperature Ta (°C) 2 SKD00075CED Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exc...


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