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IRL2505SPBF

Part Number	IRL2505SPBF
Manufacturer	International Rectifier
Description	HEXFET Power MOSFET
Published	Jan 11, 2007
Detailed Description	www.DataSheet4U.com Logic-Level Gate Drive Advanced Process Technology l Surface Mount (IRL2505S) l Low-profile through...
Datasheet	IRL2505SPBF PDF File

Overview

www.
DataSheet4U.
com Logic-Level Gate Drive Advanced Process Technology l Surface Mount (IRL2505S) l Low-profile through-hole (IRL2505L) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l l HEXFET Power MOSFET D IRL2505LPbF IRL2505SPbF ® VDSS = 55V RDS(on) = 0.
008Ω PD - 95577 G ID = 104A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4.
It provides the highest power capability and the lowest possible onresistance in any existing surface mount package.
The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.
0W in a typical surface mount application.
The through-hole version (IRL2505L) is available for lowprofile applications.
D 2 Pak TO-262 Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C V GS EAS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max.
104 74 360 3.
8 200 1.
3 ±16 500 54 20 5.
0 -55 to + 175 300 (1.
6mm from case ) Units A W W W/°C V mJ A mJ V/ns °C Thermal Resistance Parameter RθJC RθJA Junction-to-Case Junction-to-Ambient ( PCB Mounted,steady-state)** Typ.
Max.
0.
75 40 Units °C/W 07/19/04 www.
irf...

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IRL2505SPBF HEXFET Power MOSFET - International Rectifier

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