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PJ2N3906

Promax Johnton
Part Number PJ2N3906
Manufacturer Promax Johnton
Description PNP Epitaxial Silicon Transistor
Published Jan 11, 2007
Detailed Description www.DataSheet4U.com PJ2N3906 PNP Epitaxial Silicon Transistor GENERAL PURPO SE TRANSISTO R • • Collector-Emitter Volt...
Datasheet PDF File PJ2N3906 PDF File

PJ2N3906
PJ2N3906


Overview
www.
DataSheet4U.
com PJ2N3906 PNP Epitaxial Silicon Transistor GENERAL PURPO SE TRANSISTO R • • Collector-Emitter Voltage: VCEO = 40V Collector Dissipation: P C (max) = 625 mW .
TO-92 SOT-23 ABSOLUTE MAXIMUM RATINGS (Ta = 25 ℃) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj T stg Value 40 40 5 200 625 150 -55~150 Unit V V V mA mW ℃ ℃ Device PJ2N3906CT PJ2N3906CX Operating Temperature -20℃～+85℃ Package TO-92 SOT-23 P in : 1.
Emitter 2.
Base 3.
Collector P in : 1.
Base 2.
Emitter 3.
Collector ORDERING INFORMATION ELECTRICAL CHARACTERISTICS (T a = 25℃) Characte ristic Collector-Base Breakdown Voltage *Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Curent Base Cut-off Current *DC Current Gain Symbol BVCBO BVCEO BVEBO ICEX IBL hFE Te st Conditions IC= 10μA , IE =0 IC= 1mA , IB=0 IE =10μA , IC=0 VCE = 30V , VBE = 3V VCE = 30V , VBE = 3V Ic =0.
1mA, VCE =1V Ic =1mA, VCE =1V Ic=10mA; VCE =1V Ic =50 mA, VCE =1V Ic =100 mA, VCE =1V IC= 10 mA , IB=1mA IC= 50mA , IB=5mA IC= 10 mA , IB=1mA IC= 50mA , IB=5mA VCB =5V, IE =0 f=1MHz Ic =10 mA, VCE =20V f=100MHz Vcc =3 V, VBE =0.
5V Ic =10 mA, IB1 =1mA Vcc =3V, Ic =1mA IB1=IB2=1 mA Min 40 40 6 Typ Max Uni t V V V nA nA 50 50 60 80 100 60 30 0.
65 300 0.
25 0.
4 0.
85 0.
95 4.
5 *Collector-Emitter Saturation Voltage *Base-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Produce Turn On Time Turn Off Time VCE(sat) VBE(sat) C ob fT ton toff V V V V pF MHz 250 70 250 ns ns *Pulse Test: Pulse Width ≤ 300μs.
Duty Cycle ≤ 2% 1-3 2002/01.
rev.
A PJ2N3906 PNP Epitaxial Silicon Transistor DC CURRENT GAIN CURRENT GAIN-BANDWIDTH PRODUCT BASE-EMITTER SATURATION VOLTAGE COLLECTOR-EMITTER SATURATION VOLTAGE OUTPUT CAPACITANCE 2-3 2002/01.
rev.
A PJ2N3906 PNP Epitaxial Silicon Transistor 3-3 2002/01.
rev.
A ...


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