DatasheetsPDF.com

DIM200MHS12-A000

Part Number	DIM200MHS12-A000
Manufacturer	Dynex Semiconductor
Description	Igbt Modules - Half Bridge
Published	Jan 13, 2007
Detailed Description	www.DataSheet4U.com DIM200MHS12-A000 DIM200MHS12-A000 Half Bridge IGBT Module Replaces June 2002, version DS5535-2.1 D...
Datasheet	DIM200MHS12-A000 PDF File

Overview

www.
DataSheet4U.
com DIM200MHS12-A000 DIM200MHS12-A000 Half Bridge IGBT Module Replaces June 2002, version DS5535-2.
1 DS5535-3.
0 March 2003 FEATURES I I I 10µs Short Circuit Withstand Non Punch Through Silicon Isolated Copper Baseplate KEY PARAMETERS VCES (typ) VCE(sat)* (max) IC (max) IC(PK) 1200V 2.
2V 200A 400A *(measured at the power busbars and not the auxiliary terminals) APPLICATIONS I I Inverters Motor Controllers 11(C2) 2(E2) 6(G2) 7(E2) 3(C1) 1(E1C2) The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 600V to 3300V and currents up to 2400A.
The DIM200MHS12-A000 is a half bridge switch 1200V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module.
The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10µs short circuit withstand.
The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety.
9(C1) 5(E1) 4(G1) Fig.
1 Half bridge circuit diagram ORDERING INFORMATION Order As: DIM200MHS12-A000 Note: When ordering, please use the whole part number.
11 10 8 9 1 2 3 6 7 5 4 Outline type code: M (See package details for further information) Fig.
2 Electrical connections - (not to scale) Caution: This device is sensitive to electrostatic discharge.
Users should follow ESD handling procedures.
1/10 www.
dynexsemi.
com www.
DataSheet4U.
com DIM200MHS12-A000 ABSOLUTE MAXIMUM RATINGS - PER ARM Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device.
In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package.
Appropriate safety precautions should always be followed.
Exposure to Absolute Maximum Ratings may affect device reliability.
Tcase = 25˚C unless stated otherwise Symbol VCES VGES IC IC(PK) P...

Similar Datasheet

DIM200MHS12-A000 Igbt Modules - Half Bridge - Dynex Semiconductor

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)