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NGB18N40CLBT4

ON Semiconductor
Part Number NGB18N40CLBT4
Manufacturer ON Semiconductor
Description N-Channel D2PAK
Published Jan 17, 2007
Detailed Description www.DataSheet4U.com NGB18N40CLBT4 Ignition IGBT 18 Amps, 400 Volts N−Channel D2PAK This Logic Level Insulated Gate Bipo...
Datasheet PDF File NGB18N40CLBT4 PDF File

NGB18N40CLBT4
NGB18N40CLBT4

Overview
www.
DataSheet4U.
com NGB18N40CLBT4 Ignition IGBT 18 Amps, 400 Volts N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications.
Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.
• Ideal for Coil−on−Plug Applications • Gate−Emitter ESD Protection • Temperature Compensated Gate−Collector Voltage Clamp Limits Stress Applied to Load • Integrated ESD Diode Protection • New Design Increases Unclamped Inductive Switching (UIS) Energy Per Area • Low Threshold Voltage to Interface Power Loads to Logic or Microprocessor Devices • Low Saturation Voltage • High Pulsed Current Capability • Integrated Gate−Emitter Resistor (RGE) • Emitter Ballasting for Short−Circuit Capability MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Collector−Emitter Voltage Collector−Gate Voltage Gate−Em...


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