DatasheetsPDF.com

NSS12200WT1G

ON Semiconductor
Part Number NSS12200WT1G
Manufacturer ON Semiconductor
Description Low VCE(sat) PNP Transistor
Published Jan 17, 2007
Detailed Description www.DataSheet4U.com NSS12200WT1G 12 V, 3 A, Low VCE(sat) PNP Transistor ON Semiconductor’s e2 PowerEdge family of low V...
Datasheet PDF File NSS12200WT1G PDF File

NSS12200WT1G
NSS12200WT1G

Overview
www.
DataSheet4U.
com NSS12200WT1G 12 V, 3 A, Low VCE(sat) PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability.
These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.
Typical application are DC−DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives.
In the automotive industry they can be used in air bag deployment and in the instrument cluster.
The high current gain allows e2PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers.
Features http://onsemi.
com 12 VOLTS 3.
0 AMPS PNP LOW VCE(sat) TRANSISTOR EQUIVALENT RDS(on) 163 mW COLLECTOR 1, 2, 5, 6 3 BASE 4 EMITTER • • • • • High Current Capability (3 A) High Power Handling (Up to 650 mW) Low VCE(s) (170 mV Typical @ 1 A) Small Size This is a Pb−Free Device Benefits • High Specific Current and Power Capability Reduces Required PCB Area • Reduced Parasitic Losses Increases Battery Life MAXIMUM RATINGS (TA = 25°C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current − Continuous Collector Current − Peak Electrostatic Discharge Symbol VCEO VCBO VEBO IC ICM ESD Max −12 −12 −5.
0 −2.
0 −3.
0 Unit Vdc Vdc Vdc Adc 1 SC−88/SOT−363 CASE 419B STYLE 20 DEVICE MARKING 6 V2M G 1 V2 = Specific Device Code M = Date Code G = Pb−Free Package HBM Class 3 MM Class C Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not v...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)