DatasheetsPDF.com

NTD4815NH

ON Semiconductor
Part Number NTD4815NH
Manufacturer ON Semiconductor
Description Power MOSFET
Published Jan 17, 2007
Detailed Description www.DataSheet4U.com NTD4815NH Power MOSFET 30 V, 35 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS(on) to ...
Datasheet PDF File NTD4815NH PDF File

NTD4815NH
NTD4815NH

Overview
www.
DataSheet4U.
com NTD4815NH Power MOSFET 30 V, 35 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG These are Pb−Free Devices http://onsemi.
com V(BR)DSS 30 V RDS(ON) MAX 15 mW @ 10 V 27.
7 mW @ 4.
5 V D 35 A ID MAX Applications • CPU Power Delivery • DC−DC Converters • High Side Switching MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA (Note 2) Power Dissipation RqJA (Note 2) Continuous Drain Current RqJC (Note 1) Power Dissipation RqJC (Note 1) Pulsed Drain Current tp=10ms TA = 25°C TA = 85°C TA = 25°C TA = 25°C Steady State TA = 85°C TA = 25°C TC = 25°C TC = 85°C TC = 25°C TA = 25°C TA = 25°C PD IDM IDmaxPkg TJ, TSTG IS dV/dt EAS PD ID PD ID Symbol VDSS VGS ID Value 30 ±20 8.
5 6.
5 1.
92 6.
9 5.
3 1.
26 35 27 32.
6 87 35 −55 to +175 27 6 35.
6 W A A °C A V/ns mJ 4 Drain YWW 48 15NHG W A W 1 2 A 3 DPAK CASE 369C (Bent Lead) STYLE 2 Unit V V A G S N−CHANNEL MOSFET 4 4 4 1 2 3 3 IPAK IPAK CASE 369AC CASE 369D (Straight Lead) (Straight Lead DPAK) 2 3 1 MARKING DIAGRAMS & PIN ASSIGNMENTS 4 Drain YWW 48 15NHG 4 Drain YWW 48 15NHG Current Limited by Package Operating Junction and Storage Temperature Source Current (Body Diode) Drain to Source dV/dt Single Pulse Drain−to−Source Avalanche Energy (VDD = 24 V, VGS = 10 V, IL = 15.
4 Apk, L = 0.
3 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) 2 1 2 3 1 Drain 3 Gate Source Gate Drain Source 1 2 3 Gate Drain Source Y = Year WW = Work Week 4815NH= Device Code G = Pb−Free Package TL 260 °C Stresses exceeding Maximum Ratings may damage the device.
Maximum Ratings are stress ratings only.
Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to s...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)