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BGF1801-10

NXP
Part Number BGF1801-10
Manufacturer NXP
Description GSM1800 EDGE power-module
Published Jan 19, 2007
Detailed Description www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF1801-10 GSM1800 EDGE power module Product specificat...
Datasheet PDF File BGF1801-10 PDF File

BGF1801-10
BGF1801-10

Overview
www.
DataSheet4U.
com DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF1801-10 GSM1800 EDGE power module Product specification 2003 Dec 15 Philips Semiconductors Product specification GSM1800 EDGE power module FEATURES • Typical GSM EDGE performance at a supply voltage of 26 V: – Output power = 3.
5 W – Gain = 26.
5 dB – Efficiency = 19% – ACPR < −63 dBc at 400 kHz – rms EVM < 1.
2% – peak EVM < 3.
6%.
• Low distortion to CDMA signals • Excellent 2-tone performance • Low die temperature due to copper flange • Integrated temperature compensated bias • 50 Ω input/output impedance • Flat gain over frequency band.
APPLICATIONS • Base station RF power amplifiers in the 1805 to 1880 MHz frequency range...


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