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BGY588C

NXP
Part Number BGY588C
Manufacturer NXP
Description gain push-pull amplifier
Published Jan 19, 2007
Detailed Description www.DataSheet4U.com BGY588C 550 MHz, 34.5 dB gain push-pull amplifier Rev. 01 — 11 April 2005 Product data sheet 1. Pro...
Datasheet PDF File BGY588C PDF File

BGY588C
BGY588C

Overview
www.
DataSheet4U.
com BGY588C 550 MHz, 34.
5 dB gain push-pull amplifier Rev.
01 — 11 April 2005 Product data sheet 1.
Product profile 1.
1 General description Hybrid amplifier module operating at a supply voltage of 24 V (DC) in a SOT115J package.
CAUTION This device is sensitive to ElectroStatic Discharge (ESD).
Therefore care should be taken during transport and handling.
MSC895 1.
2 Features s s s s s Excellent linearity Extremely low noise Silicon nitride passivation Rugged construction TiPtAu metallized crystals ensure optimal reliability 1.
3 Applications s CATV systems in the 40 MHz to 550 MHz frequency range and intended for use as a line extender.
1.
4 Quick reference data Table 1: Quick reference data Bandwidth 40 MHz to 550 MHz; VB = 24 V; Tmb = 35 °C; ZS = ZL = 75 Ω; unless otherwise specified.
Symbol Gp Itot [1] Parameter power gain total current consumption Conditions f = 50 MHz f = 550 MHz VB = 24 V [1] Min 33.
5 33.
7 305 Typ - Max 35.
5 345 Unit dB dB mA The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V.
Philips Semiconductors BGY588C 550 MHz, 34.
5 dB gain push-pull amplifier 2.
Pinning information Table 2: Pin 1 2 3 5 7 8 9 Pinning Description input common common +VB common common output 1 3 5 7 9 1 5 9 Simplified outline Symbol 2 3 7 8 sym095 3.
Ordering information Table 3: Type number BGY588C Ordering information Package Name Description rectangular single-ended package; aluminium flange; 2 vertical mounting holes; 2 × 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads Version SOT115J 4.
Limiting values Table 4: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Vi Tstg Tmb RF input voltage storage temperature mounting base temperature Conditions Min −40 −20 Max 55 +100 +100 Unit dBmV °C °C 9397 750 14608 © Koninklijke Philips Electronics N.
V.
2005.
All rights reserved.
Product data sheet Rev.
01 — 11 April 2005 2 of ...


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