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BLC6G22-100

NXP
Part Number BLC6G22-100
Manufacturer NXP
Description UHF power LDMOS transistor
Published Jan 19, 2007
Detailed Description www.DataSheet4U.com BLC6G22-100; BLC6G22LS-100 UHF power LDMOS transistor Rev. 01 — 30 January 2006 Objective data shee...
Datasheet PDF File BLC6G22-100 PDF File

BLC6G22-100
BLC6G22-100

Overview
www.
DataSheet4U.
com BLC6G22-100; BLC6G22LS-100 UHF power LDMOS transistor Rev.
01 — 30 January 2006 Objective data sheet 1.
Product profile 1.
1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
Table 1: Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
Mode of operation 2-carrier W-CDMA [1] f (MHz) 2110 to 2170 VDS (V) 28 PL(AV) (W) 25 Gp (dB) 18 ηD (%) 32 IMD3 (dBc) −37 [1] ACPR (dBc) −40 [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.
01 % probability on CCDF per carrier; carrier spacing 10 MHz.
CAUTION This device is sensitive to ElectroStat...


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