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BUK7905-40ATE

NXP
Part Number BUK7905-40ATE
Manufacturer NXP
Description (BUK7105-40ATE / BUK7905-40ATE) TrenchPLUS standard level FET
Published Jan 19, 2007
Detailed Description www.DataSheet4U.com BUK71/7905-40ATE TrenchPLUS standard level FET Rev. 01 — 20 August 2003 Product data 1. Product pr...
Datasheet PDF File BUK7905-40ATE PDF File

BUK7905-40ATE
BUK7905-40ATE

Overview
www.
DataSheet4U.
com BUK71/7905-40ATE TrenchPLUS standard level FET Rev.
01 — 20 August 2003 Product data 1.
Product profile 1.
1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring both very low on-state resistance and TrenchPLUS diodes for temperature sensing and ESD protection.
Product availability: BUK7105-40ATE in SOT426 (D2-PAK) BUK7905-40ATE in SOT263B (TO-220).
1.
2 Features s Integrated temperature sensor s Electrostatic discharge protection s Q101 compliant s Standard level compatible.
1.
3 Applications s Variable Valve Timing for engines s Electrical Power Assisted Steering.
1.
4 Quick reference data s VDS ≤ 40 V s RDSon = 4.
5 mΩ (typ) s VF = 658 mV (typ) s SF = −1.
54 mV/K (typ).
2.
Pinning information Table 1: Pin 1 2 3 4 5 mb Pinning - SOT426 and SOT263B, simplified outline and symbol Simplified outline mb mb Description gate (g) anode (a) drain (d) cathode (k) source (s) mounting base; connected to drain (d) Symbol d a g 1 2 3 4 5 MBL317 s k Front view MBK127 1 5 SOT426 (D2-PAK) MBL263 SOT263B (TO-220) Philips Semiconductors BUK71/7905-40ATE TrenchPLUS standard level FET 3.
Limiting values Table 2: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol VDS VDGS VGS ID Parameter drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) Tmb = 25 °C; VGS = 10 V; Figure 2 and 3 Tmb = 100 °C; VGS = 10 V; Figure 2 IDM Ptot IGS(CL) Tstg Tj peak drain current total power dissipation gate-source clamping current storage temperature junction temperature Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 Tmb = 25 °C; Figure 1 continuous tp = 5 ms; δ = 0.
01 [1] [2] [2] Conditions Min −55 −55 - Max 40 40 ±20 155 75 75 620 272 10 50 +175 +175 ±100 Unit V V V A A A A W mA mA °C °C V Visol(FET-TSD) FET to temperature sense diode isolation voltage Source-drain diode IDR IDRM EDS(AL)S reverse drain current (DC) peak...


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