DatasheetsPDF.com

PMF3800SN

NXP
Part Number PMF3800SN
Manufacturer NXP
Description N-channel TrenchMOS standard level FET
Published Jan 19, 2007
Detailed Description www.DataSheet4U.com PMF3800SN N-channel TrenchMOS standard level FET Rev. 02 — 1 July 2005 Product data sheet 1. Produ...
Datasheet PDF File PMF3800SN PDF File

PMF3800SN
PMF3800SN

Overview
www.
DataSheet4U.
com PMF3800SN N-channel TrenchMOS standard level FET Rev.
02 — 1 July 2005 Product data sheet 1.
Product profile 1.
1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
1.
2 Features s Logic level compatible s Very fast switching s Subminiature surface-mounted package s Gate-source ESD protection diodes 1.
3 Applications s Relay driver s High-speed line driver 1.
4 Quick reference data s VDS ≤ 60 V s RDSon ≤ 4.
5 Ω s ID ≤ 260 mA s Ptot ≤ 0.
56 W 2.
Pinning information Table 1: Pin 1 2 3 Pinning Description gate (G) source (S) drain (D) G Simplified outline 3 Symbol D 1 2 SOT323 (SC-70) S 03ab60 Philips Semiconductors PMF3800SN N-channel TrenchMOS standard level FET 3.
Ordering information Table 2: Ordering information Package Name PMF3800SN SC-70 Description plastic surface mounted package; 3 leads Version SOT323 Type number 4.
Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter VDS VDGR VGS ID IDM Ptot Tstg Tj IS ISM Vesd drain-source voltage drain-gate voltage (DC) gate-source voltage drain current peak drain current total power dissipation storage temperature junction temperature source (diode forward) current Tsp = 25 °C Tsp = 25 °C; VGS = 10 V; Figure 2 and 3 Tsp = 100 °C; VGS = 10 V; Figure 2 Tsp = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 Tsp = 25 °C; Figure 1 Conditions 25 °C ≤ Tj ≤ 150 °C 25 °C ≤ Tj ≤ 150 °C; RGS = 20 kΩ Min −55 −55 Max 60 60 ±15 260 165 560 0.
56 +150 +150 280 560 1 Unit V V V mA mA mA W °C °C mA mA kV Source-drain diode peak source (diode forward) current Tsp = 25 °C; pulsed; tp ≤ 10 µs electrostatic discharge voltage Human body model 1; C = 100 pF; R = 1.
5 kΩ Electrostatic discharge voltage 9397 750 15218 © Koninklijke Philips Electronics N.
V.
2005.
All rights reserved.
Product data sheet Rev.
02 — 1 July 2005 2 of 12 Philips Semiconductors PMF3800SN N...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)