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Z0410xE

ST Microelectronics
Part Number Z0410xE
Manufacturer ST Microelectronics
Description STANDARD TRIACS
Published Jan 24, 2007
Detailed Description www.DataSheet4U.com ® Z0410xE/F STANDARD TRIACS FEATURES IT(RMS) = 4A VDRM = 400V to 800V IGT ≤ 25mA A1 A2 G A1 A2 G ...
Datasheet PDF File Z0410xE PDF File

Z0410xE
Z0410xE

Overview
www.
DataSheet4U.
com ® Z0410xE/F STANDARD TRIACS FEATURES IT(RMS) = 4A VDRM = 400V to 800V IGT ≤ 25mA A1 A2 G A1 A2 G DESCRIPTION The Z0410xE/F series of triacs uses a high performance TOP GLASS PNPN technology.
These parts are intended for general purpose switching and phase control applications.
ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) Parameter RMS on-state current (360° conduction angle) Z0410xE/F Z0410xF Tc= 75 °C Ta= 25 °C tp = 8.
3 ms tp = 10 ms tp = 10 ms Repetitive F = 50 Hz Non Repetitive Tstg Tj Tl Storage and operating junction temperature range Maximum lead temperature for soldering during 10s at 4.
5mm from case Value 4 0.
95 22 20 2 10 50 - 40, + 150 - 40, + 125 260 °C °C A2s A/µs A Unit A TO202-1 (Plastic) Z0410xE TO202-2 (Plastic) Z0410xF ITSM Non repetitive surge peak on-state current (Tj initial = 25°C ) I2t Value for fusing Critical rate of rise of on-state current diG /dt = 0.
1 A/µs.
IG = 50 mA I2 t dI/dt Symbol VDRM VRRM January 1995 Parameter D Repetitive peak off-state voltage Tj = 125°C 400 Voltage M 600 S 700 N 800 Unit V 1/6 Z0410xE/F THERMAL RESISTANCES Symbol Rth(j-a) Junction to ambient Parameter Z0410xE Z0410xF Rth(j-c) Rth(j-c) Junction to case for D.
C Junction to case for A.
C 360° conduction angle (F=50Hz) Value 80 100 10 7.
5 °C/W °C/W Unit °C/W GATE CHARACTERISTICS (maximum values) PG (AV)= 0.
2 W PGM = 3 W (tp = 20 µs) ELECTRICAL CHARACTERISTICS Symbol IGT VGT VGD tgt Test Conditions VD=12V (DC) RL=33Ω VD=12V (DC) RL=33Ω VD=VDRM RL=3.
3kΩ VD=VDRM IG = 40mA IT = 5.
5A dIG/dt = 0.
5A/µs IT= 50 mA Gate open IG= 1.
2 IGT Tj= 25°C Tj= 25°C Tj= 125°C Tj= 25°C Quadrant I-II-III-IV I-II-III-IV I-II-III-IV I-II-III-IV MAX MAX MIN TYP Sensitivity 10 25 1.
5 0.
2 2 mA V V µs Unit IGM = 1.
2 A (tp = 20 µs) IH * IL Tj= 25°C Tj= 25°C I-III-IV II MAX TYP TYP MAX MAX MAX MIN TYP 25 25 50 2 5 200 200 400 5 mA mA VTM * IDRM IRRM dV/dt * ITM= 5.
5A tp= 380µs VD = VDRM VR = VRRM VD=67%VDRM Gate open (dI/dt)c = 1.
8 A/ms Tj= 25°C Tj= 2...


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