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IXTU01N100

IXYS Corporation
Part Number IXTU01N100
Manufacturer IXYS Corporation
Description Power MOSFET
Published Jan 24, 2007
Detailed Description High Voltage Power MOSFET IXTU01N100 IXTY01N100 VDSS = ID25 =  RDS(on) 1000V 100mA 80 N-Channel Enhancement Mode ...
Datasheet PDF File IXTU01N100 PDF File

IXTU01N100
IXTU01N100

Overview
...TO-251 (IXTU) Symbol VDSS VDGR VGSS VGSM ID25 IDM PD TJ TJM Tstg TL TSOLD FC Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C Maximum Lead Temperature for Soldering 1.
6 mm (0.
062in.
) from Case for 10s Mounting force TO-251 TO-252 Maximum Ratings 1000 V 1000 V 20 V 30 V 100 mA 400 mA 25 W -55 .
.
.
+150 C 150 C -55 .
.
.
+150 C 300 °C 260 °C 1.
13 / 10 Nm/lb.
in.
0.
40 g 0.
35 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 25A VGS(th) VDS = VGS, ID = 25A IGSS VGS =  20V, VDS = 0V IDSS VDS = 0.
8 • VDSS, VGS = 0V...


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