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IXTM12N100

IXYS Corporation
Part Number IXTM12N100
Manufacturer IXYS Corporation
Description MOSFET
Published Jan 24, 2007
Detailed Description www.DataSheet4U.com MegaMOSTMFET IXTH / IXTM 10N100 IXTH / IXTM 12N100 VDSS 1000 V 1000 V ID25 10 A 12 A RDS(on) 1.2...
Datasheet PDF File IXTM12N100 PDF File

IXTM12N100
IXTM12N100

Overview
www.
DataSheet4U.
com MegaMOSTMFET IXTH / IXTM 10N100 IXTH / IXTM 12N100 VDSS 1000 V 1000 V ID25 10 A 12 A RDS(on) 1.
20 Ω 1.
05 Ω N-Channel Enhancement Mode Symbol VDSS VDGR VGS VGSM ID25 IDM PD TJ TJM T stg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C 10N100 12N100 10N100 12N100 Maximum Ratings 1000 1000 ±20 ±30 10 12 40 48 300 -55 .
.
.
+150 150 -55 .
.
.
+150 V V V V A A A A W °C °C °C TO-247 AD (IXTH) D (TAB) TO-204 AA (IXTM) G G = Gate, S = Source, D = Drain, TAB = Drain Mounting torque 1.
13/10 Nm/lb.
in.
TO-204 = 18 g, TO-247 = 6 g 300 °C Features l l l l Maximum lead temperature for soldering 1.
6 mm (0.
062 in.
) from case for 10 s l International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times Symbol Test Conditions Characteristic Values (T...


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