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2SC5755

Toshiba Semiconductor
Part Number 2SC5755
Manufacturer Toshiba Semiconductor
Description Silicon NPN Epitaxial Type Transistor
Published Jan 26, 2007
Detailed Description www.DataSheet4U.com 2SC5755 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5755 High-Speed Switching Applications DC...
Datasheet PDF File 2SC5755 PDF File

2SC5755
2SC5755

Overview
www.
DataSheet4U.
com 2SC5755 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5755 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications · · · High DC current gain: hFE = 400 to 1000 (IC = 0.
2 A) Low collector-emitter saturation voltage: VCE (sat) = 0.
12 V (max) High-speed switching: tf = 25 ns (typ.
) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range DC t = 10 s DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC (Note) Tj Tstg Rating 20 10 7 2 3.
5 200 500 750 150 -55 to 150 Unit V V V A mA mW °C °C JEDEC JEITA TOSHIBA ― ― 2-3S1C Weight: 0.
01 g (typ.
) Note: Mounted on FR4 board (glass epoxy, 1.
6 mm thick, Cu area: 2 645 mm ) Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Rise time Switching time Storage time Fall time Symbol ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) tr tstg tf Test Condition VCB = 20 V, IE = 0 VEB = 7 V, IC = 0 IC = 10 mA, IB = 0 VCE = 2 V, IC = 0.
2 A VCE = 2 V, IC = 0.
6 A IC = 0.
6 A, IB = 12 mA IC = 0.
6 A, IB = 12 mA See Figure 1 circuit diagram.
VCC ≈ 6 V, RL = 10 W IB1 = -IB2 = 12 mA Min ¾ ¾ 10 400 200 ¾ ¾ ¾ ¾ ¾ Typ.
¾ ¾ ¾ ¾ ¾ ¾ ¾ 60 215 25 Max 100 100 ¾ 1000 ¾ 0.
12 1.
10 ¾ ¾ ¾ ns V V Unit nA nA V 1 2002-07-22 2SC5755 Marking VCC 20 ms IB1 IB1 RL Output Input IB2 WL IB2 Duty cycle < 1% Figure 1 Switching Time Test Circuit & Timing Chart 2 2002-07-22 2SC5755 IC - VCE 2.
4 60 2 40 10000 30 20 10 3000 hFE - IC (A) hFE 8 1.
6 6 4 IC 1000 Ta = 100°C 25 Collector current DC current gain 1.
2 300 100 -55 0.
8 IB = 2mA Common emitter Ta = 25 °C Single nonrepetitive pulse 0.
6 0.
8 1.
0 1.
2 0.
4 0 0.
2 0.
4 30 0 0 10 0.
001 Common emitter VCE ...


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