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IRFG5210

International Rectifier
Part Number IRFG5210
Manufacturer International Rectifier
Description Combination 2N-2P-CHANNEL HEXFET MOSFET TECHNOLOGY
Published Jan 27, 2007
Detailed Description www.DataSheet4U.com PD - 91664B IRFG5210 POWER MOSFET 200V, Combination 2N-2P-CHANNEL THRU-HOLE (MO-036AB) HEXFET MOSF...
Datasheet PDF File IRFG5210 PDF File

IRFG5210
IRFG5210

Overview
www.
DataSheet4U.
com PD - 91664B IRFG5210 POWER MOSFET 200V, Combination 2N-2P-CHANNEL THRU-HOLE (MO-036AB) HEXFET MOSFET TECHNOLOGY ® Product Summary Part Number IRFG5210 IRFG5210 RDS(on) 1.
6Ω 1.
6Ω ID 0.
68A -0.
68A CHANNEL N P HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry design achieves very low on-state resistance combined with high transconductance.
HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability.
They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required.
The HEXFET transistor’s totally isolated package eliminates the need for additional isolating material between the device and the heatsink...


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