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SSM6N09FU

Toshiba Semiconductor
Part Number SSM6N09FU
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Jan 27, 2007
Detailed Description SSM6N09FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N09FU High Speed Switching Applications Unit:...
Datasheet PDF File SSM6N09FU PDF File

SSM6N09FU
SSM6N09FU

Overview
SSM6N09FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N09FU High Speed Switching Applications Unit: mm • Small package • Low Drain-Source ON resistance.
: Ron = 0.
7 Ω (max) (@VGS = 10 V) : Ron = 1.
2 Ω (max) (@VGS = 4 V) Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristics Symbol Rating Unit Drain-Source voltage VDS 30 V Gate-Source voltage VGSS ±20 V Drain current DC Pulse ID 400 mA IDP 800 Drain power dissipation (Ta = 25°C) PD (Note 1) 300 mW Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in JEDEC ― JEITA ― TOSHIBA 2-2J1C Weight: 6.
8 mg (typ.
) temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
...


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