DatasheetsPDF.com

IRF7421D1PBF

International Rectifier
Part Number IRF7421D1PBF
Manufacturer International Rectifier
Description FETKY MOSFET / Schottky Diode
Published Jan 28, 2007
Detailed Description www.DataSheet4U.com PD- 95304 IRF7421D1PbF FETKYä MOSFET / Schottky Diode l l l l l Co-packaged HEXFET® Power MOSFET ...
Datasheet PDF File IRF7421D1PBF PDF File

IRF7421D1PBF
IRF7421D1PBF

Overview
www.
DataSheet4U.
com PD- 95304 IRF7421D1PbF FETKYä MOSFET / Schottky Diode l l l l l Co-packaged HEXFET® Power MOSFET and Schottky Diode Ideal For Synchronous Regulator Applications Generation V Technology SO-8 Footprint Lead-Free A S S G 1 2 3 4 8 7 A A D D D D VDSS = 30V RDS(on) = 0.
035Ω Schottky Vf = 0.
39V 6 5 Description Top View The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator applications.
Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications.
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics.
The SO-8 package is designed for vapor phase, infrared or wave soldering techniques.
SO-8 Absolute Maximum Ratings (TA = 25°C unless otherwise noted) Parameter ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS dv/dt TJ, TSTG Continuous Drain Current, VGS@10Và Pulsed Drain Current À Power Dissipation à Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Á Junction and Storage Temperature Range Maximum 5.
8 4.
6 46 2.
0 1.
3 16 ± 20 -5.
0 -55 to +150 Units A W W/°C V V/ns °C Thermal Resistance Ratings Parameter RθJA Junction-to-Ambient à Maximum 62.
5 Units °C/W Notes: À Repetitive rating; pulse width limited by maximum junction temperature (see figure 11) Á ISD ≤ 4.
1A, di/dt ≤ 110A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Â Pulse width ≤ 300µs; duty cycle ≤ 2% Ã Surface mounted on FR-4 board, t ≤ 10sec.
www.
irf.
com 1 10/13/04 IRF7421D1PbF MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Br...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)