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SBW13009

SemiWell Semiconductor
Part Number SBW13009
Manufacturer SemiWell Semiconductor
Description High Voltage Fast-Switching NPN Power Transistor
Published Jan 31, 2007
Detailed Description www.DataSheet4U.com SemiWell Semiconductor SBW13009 High Voltage Fast-Switching NPN Power Transistor Features - Very ...
Datasheet PDF File SBW13009 PDF File

SBW13009
SBW13009

Overview
www.
DataSheet4U.
com SemiWell Semiconductor SBW13009 High Voltage Fast-Switching NPN Power Transistor Features - Very High Switching Speed (Typical 40ns@8.
0A) - Minimum Lot-to-Lot hFE Variation - Low VCE(sat) (Typical 320mV@8.
0A/1.
6A) - Wide Reverse Bias S.
O.
A Symbol ○ 2.
Collector 1.
Base ○ c ○ 3.
Emitter General Description This device is designed for high voltage, high speed switching characteristic required such as switching mode power supply.
TO-247 1 2 3 Absolute Maximum Ratings Symbol VCES VCEO VEBO IC ICM IB IBM PC TSTG TJ Parameter Collector-Emitter Voltage ( VBE = 0 ) Collector-Emitter Voltage ( IB = 0 ) Emitter-Base Voltage ( IC = 0 ) Collector Current Collector Peak Current ( tP ＜ 10 ms ) Base Current Base Peak Current ( tP ＜ 10 ms ) Total Dissipation at TC = 25 °C Storage Temperature Max.
Operating Junction Temperature Value 700 400 9.
0 12 25 6.
0 12 130 - 65 ~ 150 150 Units V V V A A A A W °C °C Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Value 0.
96 40 Units °C/W °C/W Oct, 2002.
Rev.
2 Copyright@SemiWell Semiconductor Co.
, Ltd.
, All rights reserved 1/6 SBW13009 Electrical Characteristics Symbol ICEV VCEO(sus) ( TC = 25 °C unless otherwise noted ) Parameter Collector Cut-off Current ( VBE = - 1.
5V ) Collector-Emitter Sustaining Voltage ( IB = 0 ) Condition VCE = 700V VCE = 700V IC = 10 mA IC = 5.
0A IC = 8.
0A IC = 12A IC = 8.
0A IB = 1.
0A IB = 1.
6A IB = 3.
0A IB = 1.
6A TC = 100 °C IB = 1.
0A IB = 1.
6A IB = 1.
6A TC = 100 °C VCE = 5V VCE = 5V VCC = 125V IB2 = - 1.
6A TC = 100 °C Min - Typ - Max 1.
0 5.
0 - Units mA 400 - V VCE(sat) Collector-Emitter Saturation Voltage - - 0.
5 1.
0 1.
5 2.
0 V VBE(sat) Base-Emitter Saturation Voltage IC = 5.
0A IC = 8.
0A IC = 8.
0A - - 1.
2 1.
6 1.
5 V hFE DC Current Gain Resistive Load Storage Time Fall Time Inductive Load Storage Time Fall Time Inductive Load Storage Time Fall Time IC = 5.
0A IC = 8.
0A IC = 8.
...


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