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2SK3600-01S

Fuji Electric
Part Number 2SK3600-01S
Manufacturer Fuji Electric
Description N-CHANNEL SILICON POWER MOSFET
Published Feb 3, 2007
Detailed Description www.DataSheet4U.com 2SK3600-01L,S,SJ FUJI POWER MOSFET 200304 Super FAP-G Series Features High speed switching Low on-...
Datasheet PDF File 2SK3600-01S PDF File

2SK3600-01S
2SK3600-01S

Overview
www.
DataSheet4U.
com 2SK3600-01L,S,SJ FUJI POWER MOSFET 200304 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) P4 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Non-repetitive Avalanche current Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max.
power dissipation Operating and storage temperature range Symbol V DS VDSX *5 ID ID(puls] VGS IAS *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25°C Tc=25°C Tch Tstg Ratings 100 70 ±29 ±116 ±30 29 155.
8 20 5 1.
67 105 +150 -55 to +150 Unit V V A A V A mJ kV/µs kV/µs W °C °C *2 Tch < =150°C *5 VGS=-30V Equivalent circuit schematic Drain(D) Gate(G) Source(S) *1 L=222µH, Vcc=48V, Tch=25°C, See to Avalanche Energy Graph *3 IF< = BVDSS, Tch < = 150°C *4 VDS < = -ID, -di/dt=50A/µs, Vcc < = 100V Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Test Conditions ID= 250µA VGS=0V ID= 250µA VDS=VGS VDS=100V VGS=0V VDS=80V VGS=0V VGS=±30V VDS=0V ID=10A VGS=10V ID=10A VDS=25V VDS =75V VGS=0V f=1MHz VCC=48V ID=10A VGS=10V RGS=10 Ω V CC =50V ID=20A VGS=10V L=222µH Tch=25°C IF=20A VGS=0V Tch=25°C IF=20A VGS=0V -di/dt=100A/...


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