DatasheetsPDF.com

2SK3611-01MR

Fuji Electric
Part Number 2SK3611-01MR
Manufacturer Fuji Electric
Description N-CHANNEL SILICON POWER MOSFET
Published Feb 3, 2007
Detailed Description www.DataSheet4U.com 2SK3611-01MR FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance ...
Datasheet PDF File 2SK3611-01MR PDF File

2SK3611-01MR
2SK3611-01MR

Overview
www.
DataSheet4U.
com 2SK3611-01MR FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) TO-220F Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Non-repetitive Avalanche current Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max.
power dissipation Operating and storage temperature range Isolation voltage Symbol V DS VDSX *5 ID ID(puls] VGS IAS *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25°C Tc=25°C Tch Tstg VISO Ratings 250 220 ±10 ±40 ±30 10 182 20 5 2.
16 25 +150 -55 to +150 2 Unit V V A A V A mJ kV/µs kV/µs W Equivalent circuit schematic Drain(D) Gate(G) Source(S) °C °C kVrms < < *1 L=3.
05mH, Vcc=48V *2 Tch < 150°C *3 I F -I D , -di/dt=50A/µs, Vcc BV DSS , Tch < = = = 150°C = *4 VDS < *5 VGS=-30V *6 t=60sec f=60Hz = 250V Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Test Conditions ID= 250µA VGS=0V ID= 250µA VDS=VGS VDS=250V VGS=0V VDS=200V VGS=0V VGS=±30V VDS=0V ID=5A VGS=10V ID=5A VDS=25V VDS =75V VGS=0V f=1MHz VCC=48V ID=5A VGS=10V RGS=10 Ω VCC =125V ID=10A VGS=10V L=100µH Tch=25°C IF=10A VGS=0V Tch=25°C IF=10A VGS=0V -di/dt=1...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)