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2SK3613-01

Fuji Electric
Part Number 2SK3613-01
Manufacturer Fuji Electric
Description N-CHANNEL SILICON POWER MOSFET
Published Feb 3, 2007
Detailed Description www.DataSheet4U.com 2SK3613-01 FUJI POWER MOSFET 200304 Super FAP-G Series Features High speed switching Low on-resist...
Datasheet PDF File 2SK3613-01 PDF File

2SK3613-01
2SK3613-01


Overview
www.
DataSheet4U.
com 2SK3613-01 FUJI POWER MOSFET 200304 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-CHANNEL SILICON POWER MOSFET FUJI POWER MOS FET Outline Drawings Drawings (mm) (mm) O Š }•@–¡`Œ OUT VIEW Fig.
1 o ‚Q Ž}‹• î– Æ• MARKING • \ Ž ¦ “ à — e •Æ Fig.
1 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters o ‚ }‹•Žî– DIMENSIONS ARE IN MILLIMETERS.
MARKING Trademark Note:1.
Dimension shown in ( ) is reference values.
j• ’ P ‚ .
•iQ jÍŽ•‚@ –¡à•“ l• l’B é•‚· Æ Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Ratings Unit 250 V 220 V Continuous drain current ±14 A ±2.
2 ** A Pulsed drain current ID(puls] ±56 A Gate-source voltage VGS ±30 V Non-repetitive Avalanche current IAS *2 14 A Maximum Avalanche Energy EAS *1 129.
1 mJ Maximum Drain-Source dV/dt dVDS/dt *4 20 kV/µs Peak Diode Recovery dV/dt dV/dt *3 5 kV/µs Max.
power dissipation PD Tc=25°C 105 W Ta=25°C 2.
4 ** +150 Operating and storage Tch °C -55 to +150 temperature range Tstg °C ** Surface mounted on 1000mm2, t=1.
6mm FR-4 PCB(Drain pad area : 500mm2) *1 L=1.
11mH, Vcc=48V,Tch=25°C, See to Avalanche Energy Graph *2 Tch < =150°C *3 IF < = BVDSS, Tch < = 150°C *4 VDS < = -ID, -di/dt=50A/µs, Vcc < = 250V *5 VGS=-30V Item Drain-source voltage Symbol V DS VDSX *5 ID Tc=25°C Ta=25°C “à—e •\Ž¦ •¤W Special specification for customer CONNECTION 11 G G :: Gate Gate Œ‹•ü} D “ÁŽê•i‹L•† Lot No.
ƒ•bƒgNo.
Type name 22 S1 S1 :: Source1 Source1 33 S2 S2 :: Source2 Source2 4 4D D :: Drain Drain G S1 S2 Œ`–¼ Equivalent circuit schematic D : Drain G : Gate S1 : Source S2 : Source Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacita...


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