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HY67V161610D

Part Number	HY67V161610D
Manufacturer	Hynix Semiconductor
Description	2 Banks x 512K x 16 Bit Synchronous DRAM
Published	Feb 4, 2007
Detailed Description	www.DataSheet4U.com HY57V161610D 2 Banks x 512K x 16 Bit Synchronous DRAM D E S C R IP T IO N THE Hyundai HY57V161610D...
Datasheet	HY67V161610D PDF File

Overview

www.
DataSheet4U.
com HY57V161610D 2 Banks x 512K x 16 Bit Synchronous DRAM D E S C R IP T IO N THE Hyundai HY57V161610D is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth.
HY57V161610D is organized as 2banks of 524,288x16.
HY57V161610D is offering fully synchronous operation referenced to a positive edge clock.
All inputs and outputs are synchronized with the rising edge of the clock input.
The data paths are internally pipelined to achieve very high bandwidth.
All input and output voltage levels are compatible with LVTTL.
Programmable options include the length of pipeline (Read latency of 1,2 or 3), the number of consecutive read or write cycles initiated by a single control command (Burst length of 1,2,4,8 or full page), and the burst count sequence(sequential or interleave).
A burst of read or write cycles in progress can be terminated by a burst terminate command or can be i...

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HY67V161610D 2 Banks x 512K x 16 Bit Synchronous DRAM - Hynix Semiconductor

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