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KTC3790U

KEC semiconductor
Part Number KTC3790U
Manufacturer KEC semiconductor
Description High Voltage MOSFETs
Published Feb 7, 2007
Detailed Description www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA VHF/UHF WIDE BAND AMPLIFIER APPLICATION. KTC3790U EPITAXIAL PLANAR NP...
Datasheet PDF File KTC3790U PDF File

KTC3790U
KTC3790U

Overview
www.
DataSheet4U.
com SEMICONDUCTOR TECHNICAL DATA VHF/UHF WIDE BAND AMPLIFIER APPLICATION.
KTC3790U EPITAXIAL PLANAR NPN TRANSISTOR FEATURES Low Noise Figure, High Gain.
A E M B M NF=1.
2dB, |S21e| =13dB (f=1GHz).
2 2 D 1 3 MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg RATING 20 10 1.
5 65 100 150 -55 150 UNIT V V V mA mW 1.
EMITTER 2.
BASE 3.
COLLECTOR C H N K N DIM A B C D E G H J K L M N MILLIMETERS _ 0.
20 2.
00 + _ 0.
15 1.
25 + _ 0.
10 0.
90 + 0.
3+0.
10/-0.
05 _ 0.
20 2.
10 + 0.
65 0.
15+0.
1/-0.
06 1.
30 0.
00-0.
10 0.
70 _ 0.
10 0.
42 + 0.
10 MIN J L G USM Marking Type Name h FE Rank R CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Reverse Transfer Capacitance Transition Frequency Insertion Gain Noise Figure SYMBOL ICBO IEBO hFE (Note1) Cre fT |S21e|2 NF TEST CONDITION VCB=10V, IE=0 VEB=1V, IC=0 VCE=8V, IC=20mA VCB=10V, IE=0, f=1MHz (Note2) VCE=8V, IC=20mA VCE=8V, IC=20mA, f=1GHz VCE=8V, IC=7mA, f=1GHz MIN.
50 11 - TYP.
0.
35 9 13 1.
2 MAX.
1 1 250 0.
9 2.
5 UNIT A A pF GHz dB dB Note 1 : hFE Classification L:50~100, M:80~160, N:125~250.
Note 2 : Cre is measured by 3 terminal method with capacitance bridge.
2005.
11.
16 Revision No : 1 1/5 www.
DataSheet4U.
com KTC3790U TYPICAL CHARACTERISTICS REVERSE TRANSFER CAPACITANCE Cre (pF) hFE - IC 300 Cre - VCB 3 2 f =1.
0MHz Ta=25 C DC CURRENT GAIN hFE 200 VCE=8V Ta=25 C 100 70 50 30 1 0.
5 10 0.
5 1 5 10 50 0.
1 1 5 10 20 30 COLLECTOR CURRENT IC (mA) COLLECTOR-BASE VOLTAGE VCB (V) f T - IC TRANSITION FREQUENCY fT (GHz) 2 INSERTION GAIN S21e (dB) 30 20 10 5 VCE=8V Ta=25 C S21e 15 2 - IC 10 5 VCE = 8V f = 1.
0GHz Ta=25 C 1 1 5 10 20 30 0 0.
5 1 5 10 50 70 COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA) S21e 20 2 - f 7 NF - I C NOISE FIGURE NF (dB) VCE = 8V...


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