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MRF5S21150HSR3

Part Number	MRF5S21150HSR3
Manufacturer	Freescale Semiconductor
Description	RF Power Field Effect Transistors
Published	Feb 15, 2007
Detailed Description	www.DataSheet4U.com Freescale Semiconductor Technical Data MRF5S21150H Rev. 1, 5/2006 RF Power Field Effect Transisto...
Datasheet	MRF5S21150HSR3 PDF File

Overview

www.
DataSheet4U.
com Freescale Semiconductor Technical Data MRF5S21150H Rev.
1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz.
Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s .
To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications.
• Typical 2 - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1300 mA, Pout = 33 Watts Avg.
, Full Frequency Band, Channel Bandwidth = 3.
84 MHz, PAR = 8.
5 dB @ 0.
01% Probability on CCDF.
Power Gain — 12.
5 dB Efficiency — 25% IM3 @ 10 MHz Offset — - 37 dBc in 3.
84 MHz Channel Bandwidth ACPR @ 5 MHz Offset — - 39 dBc in 3.
84 MHz Channel Bandwidth • Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 125 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • Lower Thermal Resistance Package • Low Gold Plating Thickness on Leads, 40μ″ Nominal.
• RoHS Compliant • In Tape and Reel.
R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF5S21150HR3 MRF5S21150HSR3 2110 - 2170 MHz, 33 W AVG.
, 28 V 2 x W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465B - 03, STYLE 1 NI - 880 MRF5S21150HR3 CASE 465C - 02, STYLE 1 NI - 880S MRF5S21150HSR3 Table 1.
Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Case Operating Temperature Operating Junction Temperature CW Operation @ TC = 25°C Derate above 25°C Symbol VDSS VGS PD Tstg TC TJ CW Value - 0.
5, +65 - 0.
5, +15 380 2.
2 - 65 to +150 150 200 150 0.
84 Unit Vdc Vdc W W/°C °C °C °C W W/°C Table 2.
Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 100 W CW Case Temperature 75°C, 33 W CW Symbol RθJC Va...

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MRF5S21150HSR3 RF Power Field Effect Transistors - Freescale Semiconductor

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