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RSU002P03

Rohm
Part Number RSU002P03
Manufacturer Rohm
Description 4V Drive Pch MOSFET
Published Feb 15, 2007
Detailed Description www.DataSheet4U.com RSU002P03 Transistors 4V Drive Pch MOSFET RSU002P03 zStructure Silicon P-channel MOSFET zDimension...
Datasheet PDF File RSU002P03 PDF File

RSU002P03
RSU002P03

Overview
www.
DataSheet4U.
com RSU002P03 Transistors 4V Drive Pch MOSFET RSU002P03 zStructure Silicon P-channel MOSFET zDimensions (Unit : mm) UMT3 2.
0 0.
9 0.
3 (3) zFeatures 1) Low On-resistance 2) 4V drive 0.
2 0.
7 1.
25 (2) (1) 2.
1 0.
65 0.
65 1.
3 0.
15 zApplications Switching (1) Source (2) Gate (3) Drain Each lead has same dimensions Abbreviated symbol : WP zPackaging specifications Package Type RSU002P03 Code Basic ordering unit (pieces) Taping T106 3000 zInner circuit (3) (2) ∗1 ∗2 (1) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (1) Source (2) Gate (3) Drain zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Total power dissipation Channel temperature Range of storage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Each terminal mounted on a recommended land Continuous Pulsed Symbol VDSS VGSS ID IDP ∗1 PD ∗2 Tch Tstg Limits −30 ±20 ±0.
25 ±0.
5 0.
2 150 −55 to +150 Unit V V A A W °C °C zThermal resistance Parameter Channel to ambient ∗ Each terminal mounted on a recommended land Symbol Rth(ch-a) ∗ Limits 625 Unit °C/W Rev.
A 0.
1Min.
1/4 RSU002P03 Transistors zElectrical characteristics (Ta=25°C) Parameter Symbol Min.
IGSS − Gate-source leakage Drain-source breakdown voltage V(BR) DSS −30 Zero gate voltage drain current − IDSS Gate threshold voltage VGS (th) −1.
0 − Static drain-source on-state − RDS (on)∗ resistance − Yfs ∗ 0.
2 Forward transfer admittance − Ciss Input capacitance − Output capacitance Coss Reverse transfer capacitance − Crss Turn-on delay time − td (on) ∗ Rise time − tr ∗ Turn-off delay time − td (off) ∗ Fall time − tf ∗ ∗Pulsed Typ.
− − − − 0.
9 1.
4 1.
6 − 30 4 5 8 5 30 40 Max.
±10 − −1 −2.
5 1.
4 2.
1 2.
4 − − − − − − − − Unit µA V µA V Ω Ω Ω S pF pF pF ns ns ns ns Conditions VGS=±20V, VDS=0V ID= −1mA, VGS=0V VDS= −30V, VGS=0V VDS= −10V, ID= −1mA ID= −0.
25A, VGS= −10V ID= −0.
15A, VGS= −4.
5V ID= −0.
15A, VGS= −4V VDS= −10V, ID= −0.
15A VDS= −10V VGS=0V f=1MHz VDD −15V ID= −0.
15A VGS= −10V RL=100Ω RG=10...


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